PMV20XNE Nexperia

PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mW ElectroStatic Discharge (ESD) protection: 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 7.2 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 5.7 A T = 25 C - 19 23 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors PMV20XNE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV20XNE TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV20XNE %G9 1 % = placeholder for manufacturing site code PMV20XNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 10 November 2014 2 / 15