Product Information

PMV213SN

PMV213SN electronic component of NXP

Datasheet
MOSFET, N CH, 100V, 1.9A, SOT-23
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.4349 ea
Line Total: USD 43.49

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 100
Multiples : 1
100 : USD 0.4349
500 : USD 0.2674

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Current Temperature
Device Marking
External Depth
External Length / Height
External Width
Full Power Rating Temperature
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Pulse Current Idm
Tape Width
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
LoadingGif

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Additional Infomation About Product

PMV213SN TrenchMOS standard level FET Rev. 02 19 February 2003 Product data M3D088 1. Product prole 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PMV213SN in SOT23. 1.2 Features Low on-state resistance in a small surface mount package. 1.3 Applications DC-to-DC primary side switching. 1.4 Quick reference data V 100 V I 1.9 A DS D P 2W R 250 m tot DSon 2. Pinning information Table 1: Pinning - SOT23 simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MSB003 SOT23PMV213SN Philips Semiconductors TrenchMOS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 100 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k - 100 V DGR j GS V gate-source voltage (DC) - 30 V GS I drain current (DC) T =25 C V =10V Figure 2 and 3 - 1.9 A D sp GS T = 100 C V =10V Figure 2 - 1.2 A sp GS I peak drain current T =25 C pulsed t 10 s Figure 3 - 7.6 A DM sp p P total power dissipation T =25 C Figure 1 -2 W tot sp T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 1.7 A S sp I peak source (diode forward) current T =25 C pulsed t 10 s - 6.9 A SM sp p 9397 750 11128 Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 02 19 February 2003 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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