NJG1681MD7 HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 6GHz. In addition, this switch is able to handle high power signals. NJG1681MD7 The NJG1681MD7 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin EQFN14-D7 package is adopted. APPLICATIONS LTE, UMTS, CDMA, GSM applications IEEE802.11p application Antenna switching, bands switching, post PA switching applications FEATURES Low voltage logic control V =1.8V typ. CTL(H) Low voltage operation V =2.7V typ. DD Low distortion IIP3=+73dBm typ. f=829+849MHz, P =24dBm IN IIP3=+71dBm typ. f=1870+1910MHz, P =24dBm IN 2nd harmonics=-85dBc typ. f=0.9GHz, P =35dBm IN 3rd harmonics=-90dBc typ. f=0.9GHz, P =35dBm IN P-0.1dB +36dBm min. Low insertion loss 0.18dB typ. f=0.9GHz, P =35dBm IN 0.20dB typ. f=1.9GHz, P =33dBm IN 0.23dB typ. f=2.7GHz, P =27dBm IN 0.45dB typ. f=6.0GHz, P =27dBm IN Ultra small & ultra thin package EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm.) RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION (TOP VIEW) Pin connection 11 10 9 8 1. GND 8. GND 2. NC(GND) 9. P1 12 7 3. P2 10. GND 4. GND 11. GND 13 6 5. GND 12. VDD 6. PC 13. NC(GND) 14 5 7. GND 14. VCTL Exposed PAD: GND 1 2 3 4 TRUTH TABLE H=V , L=V CTL(H) CTL(L) VCTL Path H PC-P1 L PC-P2 NOTE: Please note that any information on this datasheet will be subject to change. Ver.2015-07-17 - 1 - DECODER NJG1681MD7 ABSOLUTE MAXIMUM RATINGS (T =+25C, Z =Z =50) a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS RF Input Power P V =2.7V 37 dBm IN DD Supply Voltage V 5.0 V DD Control Voltage V 5.0 V CTL Four-layer FR4 PCB with through-hole Power Dissipation P 1300 mW D (74.2x74.2mm), Tj=150C Operating Temp. T -40 to +105 C opr Storage Temp. T -55 to +150 C stg ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: T =+25C, V =2.7V, V =0V, V =1.8V) a DD CTL(L) CTL(H) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V 2.375 2.7 5.0 V DD Operating Current I No RF input, V =2.7V - 95 180 A DD DD Control Voltage (LOW) V 0 - 0.45 V CTL(L) Control Voltage (HIGH) V 1.35 1.8 5.0 V CTL(H) Control Current I V =1.8V - 4 10 A CTL CTL(H) - 2 -