NJG1684ME2 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1684ME2 is a GaAs SP4T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1684ME2 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 2.7GHz. In addition, this switch is able to handle high power signals. NJG1684ME2 The NJG1684ME2 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin EQFN12-E2 package is adopted. APPLICATIONS LTE, UMTS, CDMA, GSM applications Post PA Switching, Antenna Switching and Bands Switching applications General Purpose Switching applications FEATURES Low voltage logic control V =1.8V typ. CTL(H) Low voltage operation V =2.7V typ. DD Low distortion IIP3=+70dBm typ. f=829+849MHz, P =24dBm IN IIP3=+69dBm typ. f=1870+1910MHz, P =24dBm IN 2nd harmonics=-80dBc typ. f=0.9GHz, P =35dBm IN 3rd harmonics=-77dBc typ. f=0.9GHz, P =35dBm IN Low insertion loss 0.25dB typ. f=0.9GHz, P =35dBm, V =2.7V IN DD 0.30dB typ. f=1.9GHz, P =33dBm, V =2.7V IN DD 0.35dB typ. f=2.7GHz, P =27dBm, V =2.7V IN DD P 36dBm min. -0.1dB Ultra small & ultra thin package EQFN12-E2 (Package size: 1.8 x 1.8 x 0.397mm) RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION (TOP VIEW) VCT VCT VDD Pin connection 6 5 4 1. P1 7. GND DECODER GND 7 3 GND 2. P2 8. P4 3. GND 9. P3 8 2 P2 P4 4. VDD 10. GND 5. VCTL2 11. PC 9 1 P1 P3 6. VCTL1 12. GND Exposed PAD: GND 10 11 12 GND PC GND TRUTH TABLE H=V , L=V CTL(H) CTL(L) VCTL1 VCTL2 Path L L PC-P1 H L PC-P2 L H PC-P3 H H PC-P4 NOTE: Please note that any information on this catalog will be subject to change. Ver.2013-12-25 - 1 - NJG1684ME2 ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50ohm a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS RF Input Power P V =2.7V, V =0/1.8V 37 dBm IN DD CTL Supply Voltage V VDD terminal 5.0 V DD Control Voltage V VCTL1, VCTL2 terminal 5.0 V CTL Four-layer FR4 PCB with through-hole Power Dissipation P 1200 mW D (101.5x114.5mm), Tj=150C Operating Temp. T -40~+85 C opr Storage Temp. T -55~+150 C stg ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: T =+25C, Z =Z =50ohm, V =2.7V, V =1.8V, V =0V, with application circuit) a s l DD CTL(H) CTL(L) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V VDD Terminal 2.375 2.7 5.0 V DD Operating Current I No RF input - 180 400 A DD Control Voltage (LOW) V VCTL1, VCTL2 Terminal 0 - 0.45 V CTL(L) Control Voltage (HIGH) V VCTL1, VCTL2 Terminal 1.35 1.8 5.0 V CTL(H) Control Current I V =1.8V - 4 10 A CTL CTL(H) - 2 -