2N3904 NTE

2N3904 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 40V CEO Collector Base Voltage, V ......................................................... 60V CB EmitterBase Voltage, V .......................................................... 6V EBO Continuous Collector Current, I .................................................. 200mA C Total Device Dissipation (T = +25C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 2.8mW/ C Total Device Dissipation (T = +25C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 10A, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10A, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 30V, V = 3V 50 nA CEX CE EB Base Cutoff Current I V = 30V, V = 3V 50 nA BL CE EB ON Characteristics (Note 1) DC Current Gain h V = 1V, I = 0.1mA 40 FE CE C V = 1V, I = 1mA 70 CE C V = 1V, I = 10mA 100 300 CE C V = 1V, I = 50mA 60 CE C V = 1V, I = 100mA 30 CE C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Contd) (Note 1) CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.2 V CE(sat) C B I = 50mA, I = 5mA 0.3 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 0.65 0.85 V BE(sat) C B I = 50mA, I = 5mA 0.95 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 10mA, V = 20V, f = 100MHz 300 MHz T C CE Output Capacitance C V = 5V, I = 0, f = 1MHz 4.0 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 1MHz 8.0 pF ibo CB C Input Impedance h I = 1mA, V = 10V, f = 1kHz 1.0 10 k ie C CE 4 Voltage Feedback Ratio h I = 1mA, V = 10V, f = 1kHz 0.5 8.0 x 10 re C CE SmallSignal Current Gain h I = 1mA, V = 10V, f = 1kHz 100 400 fe C CE Output Admittance h I = 1mA, V = 10V, f = 1kHz 1.0 30 mhos oe C CE Noise Figure NF I = 100A, V = 5V, R = 1k, 5.0 db C CE S f = 10Hz to 15.7kHz Switching Characteristics Delay Time t V = 3V, V = 0.5V, I = 10mA, 35 ns d CC EB C I = 1mA B1 Rise Time t 35 ns r Storage Time t 200 ns V = 3V, I = 10mA, s CC C I = I = 1mA B1 B2 Fall Time t 50 ns f Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.