X-On Electronics has gained recognition as a prominent supplier of NTE272 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE272 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE272 NTE

NTE272 electronic component of NTE
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See Product Specifications
Part No.NTE272
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 2A; 10W; TO202N
Datasheet: NTE272 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 34.524 ea
Line Total: USD 34.52 
Availability - 11
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 34.524
2 : USD 32.648
3 : USD 32.634

   
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Transistor
Case
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE272 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE272 and other electronic components in the Darlington Transistors category and beyond.

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NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: High DC Current Gain: h = 25,000 (Min) I = 200mA FE C = 15,000 (Min) I = 500mA C Collector Emitter Breakdown Voltage: V = 40V I = 500mA (BR)CES C Low Collector Emitter Saturation Voltage: V = 1.5V I = 1A CE(sat) C Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector Emitter Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CES Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150 C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 C/W thJA Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5 C/W thJC Note 1. NTE273 is a discontinued device and no longer available. Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele- ments are identical. V is tested in lieu of V in order to avoid errors caused (BR)CES (BR)CEO by noise pickup. The voltage measured during the V test is the V of the output (BR)CES (BR)CEO transistor.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100A, V = 0 40 V (BR)CES C BE CollectorBase Breakdown Voltage V I = 100A, I = 0 50 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10A, I = 0 12 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 10V, I = 0 100 nA EBO EB C ON Characteristics (Note 3) DC Current Gain h I = 200mA, V = 5V 25,000 65,000 150,000 fe C CE I = 500mA, V = 5V 15,000 35,000 C CE I = 1A, V = 5V 4,000 12,000 C CE CollectorEmitter Saturation Voltage V I = 1A, I = 2mA 1.2 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 2mA 1.85 2.0 V BE(sat) C B BaseEmitter ON Voltage V I = 1A, V = 5V 1.7 2.0 V BE(ON) C CE Dynamic Characteristics SmallSignal Current Gain h I = 200mA, V = 5V, 1.0 3.2 FE C CE f = 100MHz, Note 2 CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 2.5 6.0 pF cb CB E Note 3. Pulse test: Pulse Width 300 s, Duty Cycle 2.0%. NTE272 Schematic C .380 (9.65) Max B .050 (1.27) .160 (4.06) E .280 (7.25) Max .218 .128 (3.28) Dia (5.55) NTE273 Schematic C B .218 .995 (5.55) EB C (25.3) E .475 (12.0) Min Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose .100 (2.54) amplifiers. As an audio amplifier these devices, .200 (5.08) when used as a complementary pair, can drive 3.5 watts into a 3.2ohm speaker using a 14 volt Collector Connected to Tab supply with less than one per cent distortion. Be- cause of the high gain the base drive requirement is as low as 1mA in this application. They are also useful as power drivers for high current applica- TO202N tion such as voltage regulators.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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