X-On Electronics has gained recognition as a prominent supplier of Jantx2N6058 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. Jantx2N6058 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Jantx2N6058 Microchip

Jantx2N6058 electronic component of Microchip
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See Product Specifications
Part No.Jantx2N6058
Manufacturer: Microchip
Category: Darlington Transistors
Description: Darlington Transistors Power BJT
Datasheet: Jantx2N6058 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 70.1911 ea
Line Total: USD 70.19 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 70.1911
5 : USD 65.4835
10 : USD 59.8931
25 : USD 58.6953

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 1
100 : USD 79.506
250 : USD 79.0398
500 : USD 78.1452
1000 : USD 77.5404
2000 : USD 76.9482
2500 : USD 76.3434
3000 : USD 75.726
5000 : USD 75.1212
10000 : USD 74.7558

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 68.04

   
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We are delighted to provide the Jantx2N6058 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Jantx2N6058 and other electronic components in the Darlington Transistors category and beyond.

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TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 Devices Qualified Level JANTX 2N6058 2N6059 JANTXV MAXIMUM RATINGS 2N6058 2N6059 Ratings Symbol Units - Emitter Voltage 80 100 V CEO - 80 100 V Emitter - 5.0 V EBO Base Current I 0.2 B 12 I C 0 Total Power Dissipation @ T = +25 C 150 W C P 0 T @ T = +100 C 75 W C 0 - 55 C T T , J THERMAL CHARACTERISTICS TO - 3* Characteristics Symbol Max. Unit (TO - 0 Thermal Resistance, Junction - - Case 1.0 R 0 0 1) Derate linearly at 1.0 W/ > +25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 80 I V C CEO 100 - Emitter Cutoff Current 1.0 V = 40 Vdc I CE C EO 1.0 V = 50 Vdc CE - Emitter Cutoff Current 0.5 V = 80 Vdc, V = 1.5 Vdc I CE BE CEX 0.5 V = 100 Vdc, V = 1.5 Vdc CE BE Emitter - 2.0 V = 5.0 Vdc I EB EBO 6 Lake Street, Lawrence, MA 01 841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page mAdc Base Cutoff Current 2N6059 2N6058 mAdc Collector 2N6059 2N6058 mAdc Collector 2N6059 (BR) 2N6058 = 100 mAdc Vdc Emitter Breakdown Voltage Collector package outline *See appendix A for C above T JC C/W to 204AA) stg to +175 Operating & Storage Junction Temperature Range (1) Adc Collector Current Adc Vdc Base Voltage CBO Vdc Base Voltage tor Collec Vdc Collector 2N6058, 2N6059 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (2) ON CHARACTERISTICS - rrent Transfer Ratio 1,000 I = 3.0 Vdc C CE 1,000 18,000 h I = 3.0 Vdc FE C CE 150 I = 3.0 Vdc C CE - Emitter Saturation Voltage 3.0 I V C B CE(sat) 2.0 I C B Base - Emitter Saturation Voltage 4.0 I V C B BE(sat) Base - Emitter Voltage 2.8 I = 6.0 Adc, V = 3.0 Vdc V C CE BE DYNAMIC CHARACTERISTICS - Signal Short - Ci rcuit Forward Current Transfer Ratio 10 250 I = 3.0 Vdc, f = 1.0 MHz h C CE Small - Signal Short - Circuit Forward Current Transfer Ratio I = 3.0 Vdc, f = 1.0 kHz h 1,000 C CE Output Capacitance 300 V = 10 Vdc, I = 0, 100 kHz 1.0 MHz C E obo SWITCHING CHARACTERISTICS Turn - t 2.0 s V C Turn - t 10 V = I s C B1 B2 SAFE OPERATING AREA DC Tests 0 0 0 T = +25 C + 10 C, - 0 , 1 Cycle, t 1.0 s C Test 1 V CE C Test 2 V CE C Test 3 V CE C Test 4 V CE C (2) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 Cycle s, Duty 2N6059 = 155 mAdc = 90 Vdc, I 2N6058 = 200 mAdc = 70 Vdc, I = 5.0 Adc = 30 Vdc, I = 12 Adc = 12.5 Vdc, I CC off = 20 mAdc = 5.0 Adc; I = 30 Vdc; I Off Time on B CC = 20 mAdc = 5.0 Adc; I = 30 Vdc; I On Time CB f pF fe = 5.0 Adc, V fe = 5.0Adc, V Magnitude of Common Emitter Small Vdc = 120 mAdc = 12 Adc, I Vdc = 24 mAdc = 6.0 Adc, I = 120 mAdc = 12 Adc, I Vdc Collector = 12 Adc, V = 6.0 Adc, V = 1.0 Adc, V Cu Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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