BU806 BU807 www.centralsemi.com NPN SILICON DESCRIPTION: DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (T =25C) SYMBOL BU806 BU807 UNITS C Collector-Base Voltage V 400 330 V CBO Collector-Emitter Voltage V 400 330 V CEV Collector-Emitter Voltage V 200 150 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 8.0 A C Peak Collector Current I 15 A CM Continuous Base Current I 2.0 A B Power Dissipation P 60 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 70 C/W JA Thermal Resistance 2.08 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =400V (BU806) 100 A CES CE I V =330V (BU807) 100 A CES CE I V =400V, V =6.0V (BU806) 100 A CEV CE EB I V =330V, V =6.0V (BU807) 100 A CEV CE EB I V=6.0V 3.5 mA EBO EB BV I =100mA (BU806) 200 V CEO C BV I =100mA (BU807) 150 V CEO C V I =5.0A, I=50mA 1.5 V CE(SAT) C B V I =5.0A, I=50mA 2.4 V BE(SAT) C B V I=4.0A 2.0 V F F t V =100V, I =5.0A, I =50mA, I=500mA 0.35 s on CC C B1 B2 t V =100V, I =5.0A, I =50mA, I =500mA 0.4 1.0 s off CC C B1 B2 R0 (4-August 2011)BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R0 (4-August 2011) www.centralsemi.com