X-On Electronics has gained recognition as a prominent supplier of JANTX2N6193 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTX2N6193 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTX2N6193 Microchip

JANTX2N6193 electronic component of Microchip
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See Product Specifications
Part No.JANTX2N6193
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor
Datasheet: JANTX2N6193 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.9498 ea
Line Total: USD 10.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 10.9498

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 15.2742
4 : USD 13.6941
20 : USD 13.1673
40 : USD 12.6407
125 : USD 12.6407

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 100
Multiples : 100
100 : USD 11.3309

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 5
5 : USD 20.3128

   
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We are delighted to provide the JANTX2N6193 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N6193 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level JAN, JANTX 2N6193 JANTXV MAXIMUM RATINGS Ratings Symbol 2N6193 Units - Emitter Voltage 100 V CEO - 100 V C Emitter - 6.0 V EBO 5.0 I C Base Current 1.0 I B 0 Total Power Dissipation T = +25 C 1.0 W A P 0 T T = +25 C 10 W C 0 Operating & Storage Temperature Range - 65 to +200 C T T o p , TO - 39* THERMAL CHARACTERISTICS (TO - Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 17.5 R 0 0 1) Derate linearly 5.71mW/ > +25 A 0 0 2) Derate linearly 57.1mW/ > +25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Sustaining Voltage V 100 I C - Emitter Cuto ff Current I 100 CEO V = 100 Vdc CE Emitter - I 100 EBO V = 6.0 Vdc EB - Emitter Cutoff Current 10 I CEX V = 90 Vdc, V = 1.5 Vdc CE BE - I 10 c V = 100 Vdc 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page CB CBO Ad Base Cutoff Current Collector Adc Collector Adc Base Cutoff Current Adc Collector = 50 mAdc CEO(sus) Vdc Collector package outline *See appendix A for C C for T C C for T JC C/W to 205AD) stg (2) (1) Adc Adc Collector Current Vdc Base Voltage BO Vdc Base Voltage Collector Vdc Collector 2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS DC Current Gain 60 I = 2.0 Vdc C CE h FE 60 240 I = 2.0 Vdc C CE 40 I = 2.0 Vdc C CE - Emitter Saturation Voltage 0.7 I V C B CE(sat) 1.2 I B Base - Emitter Saturation Voltage 1.2 I V C B BE(sat) 1.8 I B DYNAMIC CHARACTERISTICS - Signal Short Circuit - Current Transfe r Ratio 3.0 15 h I = 10 Vdc, f = 10 MHz C CE Output Capacitance C 300 obo V = 0, 100 kHz 1.0 MHz E Output Capacitance 1250 C ibo V = 0, 100 kHz 1.0 MHz BE C SWITCHING CHARACTERISTICS t 100 s V = - = 3.0 d CC t Rise Time 100 I = r s C B1 t 2.0 s V = - s CC C t Fall Time 200 I = - I = f s B1 B2 SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t 0.5 s C Test 1 V CE C Test 2 V CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 12010 1 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 55 mAdc = 90 Vdc, I = 5.0 Adc = 2.0 Vdc, I 0.2 Adc = 2.0 Adc, 40 Vdc I Storage Time 0.2 Adc = 2.0 Adc, I BE(off) Vdc 40 Vdc, V lay Time De f = 2.0 Vdc, I pF CB f = 10 Vdc, I pF = 0.5 Adc, V fe Forward Magnitude of Common Emitter Small C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I Collector = 5.0 Adc, V = 2.0 Adc, V = 0.5 Adc, V

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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