NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: Low Noise Figure: NF = 3.0dB Typ f = 200MHz High Current Gain Bandwidth Product: f = 1200MHz Min I = 50mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 20V CEO Collector Base Voltage, V ....................................................... 40V CBO EmitterBase Voltage, V .......................................................... 3V EBO Continuous Collector Current, I .................................................. 400mA C Continuous Base Current, I ...................................................... 400mA B Total Device Dissipation (T = +75C, Note 1), P ..................................... 2.5W C D Derate Above 25 C ...................................................... 20mW/ C Storage Temperature Range, T .......................................... 65 to +200C stg Note 1. Total Device Dissipation at T = +25C is 1 Watt. A Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 5mA, I = 0 20 V CEO(sus) C B V I = 5mA, R = 10, Note 2 40 V CER(sus) C BE Collector Cutoff Current I V = 15V, I = 0 20 A CEO CE B I V = 15V, V = 1.5V, T = +150C 5 mA CEX CE BE C V = 35V, V = 1.5V 5 mA CE BE Emitter Cutoff Current I V = 3V, I = 0 100 A EBO BE C Note 2. Pulsed through a 25mH inductor 50% Duty Cycle. Rev. 413Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 360mA, V = 5V 5 FE C CE I = 50mA, V = 15V 40 210 C CE Dynamic Characteristics CurrentGain Bandwidth Product f I = 50mA, V = 15V, f = 200MHz 1200 MHz T C CE CollectorBase Capacitance C V = 15V, I = 0, f = 1MHz 1.8 3.5 pF cb CB E Noise Figure NF I = 10mA, V = 15V, f = 200MHz 3 dB C CE Functional Test CommonEmitter Amplifier Voltage G I = 50mA, V = 15V, f = 50 to 216MHz 11 dB ve C CC Gain Power Input P I = 50mA, V = 15V, R = 50, 0.1 mW in C CC S P = 1.26mW, f = 200MHz out .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)