X-On Electronics has gained recognition as a prominent supplier of NTE278 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE278 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE278 NTE

NTE278 electronic component of NTE
NTE278 NTE
NTE278 Bipolar Transistors - BJT
NTE278  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE278
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 20V; 400mA; 2.5W; TO39
Datasheet: NTE278 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
34: USD 2.0115 ea
Line Total: USD 68.39 
Availability - 1125
Ship by Fri. 14 Mar to Thu. 20 Mar
MOQ: 34  Multiples: 1
Pack Size: 1
Availability Price Quantity
1125
Ship by Fri. 14 Mar to Thu. 20 Mar
MOQ : 34
Multiples : 1
34 : USD 2.0115
250 : USD 1.275
500 : USD 1.1825
1000 : USD 1.1563
2500 : USD 1.1325
5000 : USD 1.1162
7500 : USD 1.0987
10000 : USD 1.0825

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Kind Of Transistor
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE278 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE278 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: Low Noise Figure: NF = 3.0dB Typ f = 200MHz High Current Gain Bandwidth Product: f = 1200MHz Min I = 50mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 20V CEO Collector Base Voltage, V ....................................................... 40V CBO EmitterBase Voltage, V .......................................................... 3V EBO Continuous Collector Current, I .................................................. 400mA C Continuous Base Current, I ...................................................... 400mA B Total Device Dissipation (T = +75C, Note 1), P ..................................... 2.5W C D Derate Above 25 C ...................................................... 20mW/ C Storage Temperature Range, T .......................................... 65 to +200C stg Note 1. Total Device Dissipation at T = +25C is 1 Watt. A Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 5mA, I = 0 20 V CEO(sus) C B V I = 5mA, R = 10, Note 2 40 V CER(sus) C BE Collector Cutoff Current I V = 15V, I = 0 20 A CEO CE B I V = 15V, V = 1.5V, T = +150C 5 mA CEX CE BE C V = 35V, V = 1.5V 5 mA CE BE Emitter Cutoff Current I V = 3V, I = 0 100 A EBO BE C Note 2. Pulsed through a 25mH inductor 50% Duty Cycle. Rev. 413Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 360mA, V = 5V 5 FE C CE I = 50mA, V = 15V 40 210 C CE Dynamic Characteristics CurrentGain Bandwidth Product f I = 50mA, V = 15V, f = 200MHz 1200 MHz T C CE CollectorBase Capacitance C V = 15V, I = 0, f = 1MHz 1.8 3.5 pF cb CB E Noise Figure NF I = 10mA, V = 15V, f = 200MHz 3 dB C CE Functional Test CommonEmitter Amplifier Voltage G I = 50mA, V = 15V, f = 50 to 216MHz 11 dB ve C CC Gain Power Input P I = 50mA, V = 15V, R = 50, 0.1 mW in C CC S P = 1.26mW, f = 200MHz out .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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