NTE3017 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue grey tinted plastic T1 3/4 (5mm) package. Features: Low Forward Voltage High Radiant Power and Radiant Intensity Suitable for DC and High Pulse Current Operation High Reliability Standard T 1 3/4 (5mm) Package Applications: Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Reverse Voltage, V ................................................................. 5V R Forward Current, I F Continuous ............................................................... 150mA Peak (t = 100s, t /T = 0.5) ................................................ 300mA p p Surge Forward Current (t = 100s), I ............................................ 2.5A p FSM Power Dissipation, P .......................................................... 210mW D Junction Temperature, T ......................................................... +100C J Operating Temperature Range, T ........................................ 55 to +100C opr Storage Temperature Range, T .......................................... 55 to +100C stg Lead Soldering Temperature (t 5sec, 2mm from case), T ........................... +260C L Thermal Resistance, Junction toAmbient, R ................................... 375K/W thJA Rev. 1010Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage V I = 100mA, t = 20ms 1.3 1.7 V F F p I = 1.5A, t = 100s 2.2 2.7 V F p Temperature Coefficient of Forward Voltage I = 100mA 1.3 mV/C F Reverse Current I V = 5V 100 A R R Junction Capacitance C V = 0, f = 1MHz, E = 0 30 pF j R Radient Intensity I I = 100mA, t = 20ms 15 20 mW/sr e F p I = 1.5A, t = 100s 120 190 mW/sr F p Angle of Half Intensity 22 deg Radient Power I = 100mA, t = 20ms 15 mW e F p Temperature Coefficient of Radient Intensity I = 20mA 0.8 %/C F Peak Wavelength I = 100mA 950 nm p F Temperature Coefficient of Peak Wavelength I = 100mA 0.2 nm/C F Spectral Bandwidth I = 100mA 50 nm F Rise Time t I = 100mA 800 ns r F I = 1.5A 400 ns F Fall Time t I = 100mA 800 ns f F I = 1.5A 400 ns F Flat Denotes Cathode .230 (5.84) Dia .100 (2.54) .200 (5.08) Dia .100 (2.54) R .340 (8.63) .040 (1.01) Seating Plane .100 (2.54) .750 (19.05) Min .050 (1.27) Typ .025 (0.63) Max Sq .050 (1.27) .100 (2.54) Tolerance .010 (.254)