NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 Infrared Emitting Diode is a high intensity diode using AlGaAs/GaAs technology molded in a blue transparent plastic standard T-1 3/4 (5mm) package. This device is spectrally matched for use with phototransistor, photodiode and infrared receiver modules. Features: High Radiant Intensity Peak Wavelength = = 940nm P Low Forward Voltage High Reliability Applications: Free Air Transmission System Infrared Remote Control Units with High Power Requirements Smoke Detector Infrared Applied Sytem Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Reverse Voltage, V . 5V R Forward Current, I F Continuous . 150mA Peak (Note 1) . 1.0A Power Dissipation (T +25C), P 210mW A D Soldering Temperature (Note 2), T . +260C sol Operating Temperature Range, T -55 to +100C opr Storage Temperature Range, T -55 to +100C stg Lead Temperature (During soldering, 4mm from mold body, 5sec Max.), T . +260C L Note 1. Pulse Width = 100s, Duty Cycle = 1%Electrical Characteristics: (T = +25C unless otherwis specified) A Parameter Symbol Test Conditions Min Typ Max Unit I = 50mA 50 60 - mW/sr Radient Intensity I F e I =100mA, t = 50s, tp/T= 0.01 130 - mW/sr F p I = 1A, t = 100s, tp/T = 0.01 1400 - mW/sr F p Peak Wavelength I = 20mA - 940 - nm p F Spectral Bandwidth I = 20mA - 50 - nm F Forward Voltage V I = 50mA 1.30 1.35 1.50 V F F I =100mA, t =50s, tp/T = 0.01 - 1.55 1.85 V F p I = 1A, t = 100 s, tp/T = 0.01 - 2.6 4.0 V F p Reverse Current I V = 5V - - 10 A R R View Angle of Half Power 2 I = 20mA - 45 - deg 1/2 F Flat Denotes Cathode .228 (5.8) Dia .196 (4.98) Dia .343 (8.7) .039 (1.0) 1.102 (28.0) .019 (0.5) .078 (2.0) Min .100 (2.54) Tolerance .010 (.254)