X-On Electronics has gained recognition as a prominent supplier of NTE3041 Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. NTE3041 Transistor Output Optocouplers are a product manufactured by NTE. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

NTE3041 NTE

NTE3041 electronic component of NTE
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Part No.NTE3041
Manufacturer: NTE
Category: Transistor Output Optocouplers
Description: Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
Datasheet: NTE3041 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 2.6727 ea
Line Total: USD 10.69 
Availability - 3
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 4
Multiples : 1
4 : USD 2.6727
25 : USD 2.4297
250 : USD 1.9209
500 : USD 1.7937
1000 : USD 1.7174
2500 : USD 1.6665
5000 : USD 1.6283
7500 : USD 1.5901

65
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.707
5 : USD 2.5646
9 : USD 2.0232
25 : USD 1.9235

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE3041 from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE3041 and other electronic components in the Transistor Output Optocouplers category and beyond.

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NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6 Lead DIP type package consisting of a gallium arsenide in- frared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: High Current Transfer Ratio: 100% Min Spec Conditions Guaranteed Switching Speeds Applications: General Purpose Switching Circuits Interfacing and Coupling Systems of Different Potentials and Impedances Regulation Feedback Circuits Monitor & Detection Circuits Solid State Relays Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Input LED Reverse Voltage, V ................................................................. 6V R Continuous Forward Current, I .................................................... 60mA F LED Power Dissipation (With Negligible Power in Output Detector), P ................ 120mW D Derate Above 25 C .................................................... 1.41mW/ C Output Transistor CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterBase Voltage, V .......................................................... 7V EBO Collector Base Voltage, V ....................................................... 70V CBO Continuous Collector Current, I .................................................. 150mA C Detector Power Dissipation (With Negligible Power in Output Detector), P ............ 150mW D Derate Above 25 C .................................................... 1.76mW/ C Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V .......... 7500V ISO Total Device Power Dissipation, P ............................................... 250mW D Derate Above 25 C .................................................... 2.94mW/ C Operating Ambient Temperature Range, T .................................. 55 to +100 C A Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/16 from case, 10sec), T ..................... +260 C L Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Rev. 214Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Forward Voltage V I = 10mA 0.8 1.15 1.5 V F F I = 10mA, T = 55 C 0.9 1.3 1.7 V F A I = 10mA, T = +100 C 0.7 1.05 1.4 V F A Reverse Leakage Current I V = 6V 10 A R R Capacitance C V = 0, f = 1MHz 18 pF J Output Transistor CollectorEmitter Dark Current I V = 10V 1 50 nA CEO CE V = 30V, T = +100 C 500 A CE A CollectorBase Dark Current I V = 10V 0.2 20 nA CBO CB V = 10V, T = +100 C 100 nA CB A CollectorEmitter Breakdown Voltage V I = 1mA 30 45 V (BR)CEO C CollectorBase Breakdown Voltage V I = 100 A 70 100 V (BR)CBO C EmitterBase Breakdown Voltage V I = 100 A 7.0 7.8 V (BR)EBO E DC Current Gain h I = 2mA, V = 5V 400 FE C CE CollectorEmitter Capacitance C V = 5V, f = 1MHz 7 pF CE CE CollectorBase Capacitance C V = 0, f = 1MHz 19 pF CB CB EmitterBase Capacitance C V = 0, f = 1MHz 9 pF EB EB Coupled Output Collector Current I I = 10mA, V = 10V 10 30 mA C F CE I = 10mA, V = 10V, T = 55 C 4 mA F CE A I = 10mA, V = 10V, T = +100 C 4 mA F CE A CollectorEmitter Saturation Voltage V I = 0.5mA, I = 10mA 0.14 0.3 V CE(sat) C F TurnOn Time t I = 2mA, V = 10V, R = 100 7.5 10 s on C CC L TurnOff Time t 5.7 10 s off Rise Time t 3.2 s r Fall Time t 4.7 s f Isolation Voltage V f = 60Hz, t = 1sec 7500 V ISO Isolation Current I V = 3550V 100 A ISO IO pk 11 Isolation Resistance R V = 500V 10 ISO Isolation Capacitance C V = 0, f = 1MHz 0.2 2.0 pF ISO

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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