NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6 Lead DIP type package consisting of a gallium arsenide in- frared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: High Current Transfer Ratio: 100% Min Spec Conditions Guaranteed Switching Speeds Applications: General Purpose Switching Circuits Interfacing and Coupling Systems of Different Potentials and Impedances Regulation Feedback Circuits Monitor & Detection Circuits Solid State Relays Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Input LED Reverse Voltage, V ................................................................. 6V R Continuous Forward Current, I .................................................... 60mA F LED Power Dissipation (With Negligible Power in Output Detector), P ................ 120mW D Derate Above 25 C .................................................... 1.41mW/ C Output Transistor CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterBase Voltage, V .......................................................... 7V EBO Collector Base Voltage, V ....................................................... 70V CBO Continuous Collector Current, I .................................................. 150mA C Detector Power Dissipation (With Negligible Power in Output Detector), P ............ 150mW D Derate Above 25 C .................................................... 1.76mW/ C Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V .......... 7500V ISO Total Device Power Dissipation, P ............................................... 250mW D Derate Above 25 C .................................................... 2.94mW/ C Operating Ambient Temperature Range, T .................................. 55 to +100 C A Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/16 from case, 10sec), T ..................... +260 C L Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Rev. 214Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Forward Voltage V I = 10mA 0.8 1.15 1.5 V F F I = 10mA, T = 55 C 0.9 1.3 1.7 V F A I = 10mA, T = +100 C 0.7 1.05 1.4 V F A Reverse Leakage Current I V = 6V 10 A R R Capacitance C V = 0, f = 1MHz 18 pF J Output Transistor CollectorEmitter Dark Current I V = 10V 1 50 nA CEO CE V = 30V, T = +100 C 500 A CE A CollectorBase Dark Current I V = 10V 0.2 20 nA CBO CB V = 10V, T = +100 C 100 nA CB A CollectorEmitter Breakdown Voltage V I = 1mA 30 45 V (BR)CEO C CollectorBase Breakdown Voltage V I = 100 A 70 100 V (BR)CBO C EmitterBase Breakdown Voltage V I = 100 A 7.0 7.8 V (BR)EBO E DC Current Gain h I = 2mA, V = 5V 400 FE C CE CollectorEmitter Capacitance C V = 5V, f = 1MHz 7 pF CE CE CollectorBase Capacitance C V = 0, f = 1MHz 19 pF CB CB EmitterBase Capacitance C V = 0, f = 1MHz 9 pF EB EB Coupled Output Collector Current I I = 10mA, V = 10V 10 30 mA C F CE I = 10mA, V = 10V, T = 55 C 4 mA F CE A I = 10mA, V = 10V, T = +100 C 4 mA F CE A CollectorEmitter Saturation Voltage V I = 0.5mA, I = 10mA 0.14 0.3 V CE(sat) C F TurnOn Time t I = 2mA, V = 10V, R = 100 7.5 10 s on C CC L TurnOff Time t 5.7 10 s off Rise Time t 3.2 s r Fall Time t 4.7 s f Isolation Voltage V f = 60Hz, t = 1sec 7500 V ISO Isolation Current I V = 3550V 100 A ISO IO pk 11 Isolation Resistance R V = 500V 10 ISO Isolation Capacitance C V = 0, f = 1MHz 0.2 2.0 pF ISO