NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6Lead DIP type package. Features: 1500V Isolation High DC Current Transfer Ratio Low Cost DualInLine (DIP) Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Input LED Reverse Voltage, V . 3V R Forward Current, I F Continuous 60mA Peak (1 s p.w. 300 pps) . 3A LED Power Dissipation, P . 100mW D Derate Above 25C 1.33mW/C Output Transistor CollectorEmitter Voltage, V . 30V CEO EmitterCollector Voltage, V 7V ECO CollectorBase Voltage, V . 70V CBO Detector Power Dissipation, P . 150mW D Derate Above 25C . 2.0mW/C Total Device InputtoOutput Isolation Voltage, V 1500V ISO Total Device Power Dissipation, P 250mW D Derate Above 25C . 3.3mW/C Operating Ambient Temperature Range, T 55 to +100C A Storage Temperature Range, T 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec), T . +260C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Characteristics Forward Voltage V I = 20mA 1.5 V F F Reverse Current I V = 3V 10 A R R Reverse Breakdown Voltage V I = 10 A 3 V (BR)R RElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Characteristics CollectorEmitter Breakdown Voltage V I = 1mA 30 V (BR)CEO C EmitterCollector Breakdown Voltage V I = 100 A 7 V (BR)ECO E CollectorBase Breakdown Voltage V I = 100 A 70 V (BR)CBO C CollectorEmitter Dark Current I V = 10V, I = 0 50 nA CEO CE B CollectorBase Dark Current I V = 10V, I = 0 20 nA CBO CB E CollectorEmitter Capacitance C V = 0 10 pF CE CE DC Current Gain h V = 5V, I = 100 A 100 150 FE CE C Coupled Characteristics DC Current Transfer Ratio I /I I = 10mA, V = 10V, I = 0 20 % C F F CE B 11 InputtoOutput Isolation Resistance R V = 500V, Note 1 10 IO IO CollectorEmitter Saturation Voltage V I = 16mA, I = 2mA 0.4 V CE(sat) F C InputtoOutput Capacitance C f = 1MHz, Note 1 0.6 pF IO Output Rise Time t V = 10V, I = 2mA, R = 100 2.0 s r CC C L Output Fall Time t 2.0 s f InputtoOutput Isolation Voltage V Note 1 1500 V ISO Note 1. Measured with input leads shorted together and output leads shorted together. 6 54 .260 (6.6) Pin Connection Diagram Max 123 Anode 1 6 Base .070 (1.78) Max 2 5 Cathode Collector .350 (8.89) .300 Max (7.62) N.C. 3 4 Emitter .200 (5.08) .350 Max (8.89) Max .085 (2.16) Max .100 (2.54)