NTE3037 Silicon NPN Phototransistor Detector Description: The NTE3037 is designed for counters, Industrial and process control, sorters, switching and logic controls. This device is packaged in a TO18 case with domed glass lid. Features: High Sensitivity Base Contact Externally Available Saturation Level Directly Compatible with Most TTL Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V 40V CEO Collector Base Voltage, V . 50V CBO Emitter Base Voltage, V 5V EBO EmitterCollector Voltage, V . 5V ECO Collector Current (I ), I . 50mA L C Collector Power Dissipation, P 150mW C Derate Above 25C . 1.2mW/ C Operating Temperature Range, T 30 to +125C opr Storage Temperature Range, T 65 to +150C stg Lead Temperature (During Soldering, 1.5mm from body, 5sec max), T +260 C L OptoElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dark Current I (I ) V = 30V, E = 0 10 200 A D CEO CE 2 Light Current I V = 3V, E = 0.1mW/cm , 60 200 A L CE Note 1 2 CollectorEmitter Saturation Voltage V I = 30 A, E = 0.1mW/cm , 0.25 0.4 V CE(sat) C Note 1 Rise Time t V = 10V, I = 10mA, 2 s r CC C RR = 100100 L Fall Time t 2 s f Note 1. Color temperature = 2870 K, Standard Tungsten Lamp..228 (5.79) Max .185 (4.69) .276 (7.01) .177 Max (4.5) .500 (12.7) Min .018 (0.45) Dia Typ .100 (2.54) Dia Base Collector/Case Emitter