NTE3040 NTE

NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6 Lead DIP type package coupled with a silicon phototransistor. Applications: Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Absolute Maximum Ratings: (T = +25C, unless otherwise specified) A Infrared Emitting Diode Power Dissipation, P . 150mW D Derate above 25 C ambient . 2.0mW/ C Forward Current, I C Continuous . 100mA Peak (Pulse Width 1 sec, 300pps) 3A Reverse Voltage, V . 6V R Phototransistor Power Dissipation, P . 150mW D Derate above 25 C ambient . 2.0mW/ C Collector toEmitter Voltage, V . 30V CEO Collector toBase Voltage, V 70V CBO EmittertoCollector Voltage, V 7V ECO Total Device Power Dissipation, P . 250mW D Derate above 25 C ambient . 3.3mW/ C Storage Temperature, T . 55 to +150C stg Operating Temperature, T . 55 to +100C opr Lead Soldering Temperature (10 seconds) +260 C Electrical Characteristics: (T = +25C, Note 1, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Infrared Emitting Diode Input Forward Voltage V I = 10mA 1.18 1.50 V F F Reverse Leakage Current I V = 6V 0.001 10 A R R Note 1. Typical values at T = +25C. AElectrical Characteristics (Contd): (T = +25C, Note 1, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Phototransistor Collector Emitter Breakdown Voltage V I = 1.0mA, I = 0 30 100 V (BR)CEO C F Collector Base Breakdown Voltage V I = 100 A, I = 0 70 120 V (BR)CBO C F Emitter Collector Breakdown Voltage V I = 100 A, I = 0 7 10 V (BR)ECO E F Collector Emitter Dark Current I V = 10V, I = 0 1 50 nA CEO CE F Collector Base Dark Current I V = 10V 20 nA CBO CEB Capacitance C V = 10V, f = 1MH 8 pf CE CE Z Isolation Characteristics Input Output Isolation Voltage RMS V f = 60Hz, t = 1 min. 5300 V ISO AC Peak f = 60Hz, t = 1 sec. 7500 V AC 11 Isolation Resistance R V = 500V 10 ISO IO DC Isolation Capacitance C V = 0, f = 1MHz 0.5 pF ISO IO Transfer Characteristics DC Current Transfer Ratio CTR I = 10mA, V = 10V 20 % F CE Collector Emitter Saturation Voltage V I = 50mA, I = 2mA 0.5 V CEO(sat) F C Switching Speeds T , I = 10mA, V = 10V, 2 s ON F CC T R = 100 OFF L Note 1. Typical values at T = +25C. A Pin Connection Diagram Anode 1 6 Base 2 5 Cathode Collector N.C. 3 4 Emitter 6 54 .260 (6.6) Max 12 3 .070 (1.78) Max .350 (8.89) .300 (7.62) Max .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54)