NTE5586 Silicon Controlled Rectifier (SCR) 600V, 360 Amps, TO93 Absolute Maximum Ratings: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V & V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V DRM RRM Non Repetitive Peak Reverse Blocking Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V RSM Average On State Current (180 Conduction, Half Sine Wave, T = +85C), I . . . . . . . . . 230A C T(AV) RMS On State Current (T = +78C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A C T(RMS) Peak Gate Power (t 5ms), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W p GM Average Gate Power (f = 50Hz, d% = 50), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W G(AV) Peak Positive Gate Current (t 5ms), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A p GM Peak Gate Voltage (t 5ms), V p GM Positive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Critical Rate of Rise of OffState Voltage (To 80% V ), dv/dt . . . . . . . . . . . . . . . . . . . . . . 500V/s DRM Repetitive Peak OffState Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA DRM DRM Repetitive Peak Reverse Current (At V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA RRM RRM OnState Voltage (I = 720A, t = 10ms Sine Pulse), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55V pk p TM Holding Current (T = +25C, Anode Supply 12V Resistive Load), I . . . . . . . . . . . . . . . . . . . 600mA J H Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase (DC Operation), R . . . . . . . . . . . . . . . . . . . . . . 0.10C/W tnJC Thermal Resistance, Case toHeat Sink, R thCS Mounting Surface Smooth, Flat and Greased . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04C/W Electrical Characteristics: (T = +125C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Peak, OneCycle, I t = 10ms No Voltage Sinusoidal Half 5700 A TSM NonRepetitive Surge Reapplied Wave, Initial t = 8.3ms 5970 A Current t = 10ms 4800 A 100% V RRM Applied t = 8.3ms 5000 A 2 2 2 I t for Fusing I t t = 10ms No Voltage Sinusoidal Half 163 KA s Reapplied Wave, Initial 2 t = 8.3ms 148 KA s 2 t = 10ms 100% V 115 KA s RRM Applied 2 t = 8.3ms 105 KA s 2 2 2 I t for Fusing I t t = 0.1 to 10ms, No Voltage Reapplied 1630 KA s Threshold Voltage, Low Level V (16.7% x x I < I < x I ) 0.92 V T(TO)1 T(AV) T(AV) Threshold Voltage, High Level V (I > x I ) 0.98 V T(TO)2 T(AV) OnState Slope Resistance, r (16.7% x x I < I < x I ) 0.88 m t1 T(AV) T(AV) Low Level OnState Slope Resistance, r (I > x I ) 0.81 m t2 T(AV) High LevelElectrical Characteristics (Contd): (T = +125C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Latching Current I T = +25C, Anode Supply 12V Resistive Load 300 1000 mA L J NonRepetitive Rate of Rise di/dt Gate Drive 20V, 20, t 1s, 1000 A/s r of TurnedOn Current Anode Voltage 80% V DRM Delay Time t Gate Current 1A, di /dt = 1A/s, 1.0 s d g V = 0.67% V d DRM TurnOff Time t I = 300A, di/dt = 20A/s, V = 50V, 100 s q TM R dv/dt = 20V/s, Gate 0V 100 t = 500s p DC Gate Current Required I T = 40C Maximum required gate trigger 180 mA GT J to Trigger current/voltage is the lowest T = +25C 90 150 mA J value which will trigger the unit, 12V anodetocathode applied. T = +125C 40 mA J DC Gate Voltage Required V T = 40C 2.9 V GT J to Trigger T = +25C 1.8 3.0 V J T = +125C 1.2 V J DC Gate Current not to Trigger I Maximum gate current/voltage not to trigger is 10 mA GD the maximum value which will not trigger the unit with rated V anode tocathode ap- DRM DC Gate Voltage not to Trigger V 0.25 V GD plied. 1.443 (36.68) Max (Across Corners) 1.031 (26.18) Dia (Ceramic) .643 (16.35) For No. 6 Screw For No. 6 Screw .350 (8.89) Dia Max Cathode Gate (White) Cathode 8.100 (Red) (205.74) Max (Terminals 1, 2, & 3) 3.625 (92.07) Max 1.212 (30.8) Dia Max .156 (3.96) Max .630 (16.0) 3/416 UNF2A (Terminal 4) Anode 1.077 (27.35) Max