NTE5561, NTE5594 thru NTE5596 Silicon Controlled Rectifier (SCR) 850 Amp, TO200AC Ratings: (Maximum Values at T = +125C unless otherwise specified) J Repetitive Peak Voltage, V DRM NTE5561 .................................................................. 1600V NTE5594 ................................................................... 200V NTE5595 ................................................................... 600V NTE5596 .................................................................. 1200V Repetitive Peak Reverse Voltage, V RRM NTE5561 .................................................................. 1600V NTE5594 ................................................................... 200V NTE5595 ................................................................... 600V NTE5596 .................................................................. 1200V Non Repetitive Peak OffState Voltage, V DSM NTE5561 .................................................................. 1600V NTE5594 ................................................................... 200V NTE5595 ................................................................... 600V NTE5596 .................................................................. 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5561 .................................................................. 1700V NTE5594 ................................................................... 300V NTE5595 ................................................................... 700V NTE5596 .................................................................. 1200V Average On State Current (Half Sine Wave), I T(AV) +55C Heatsink Temperature, Double Side Cooled .............................. 820A +85C Heatsink Temperature, Single Side Cooled ............................... 320A RMS OnState Current (+25C Heatsink Temperature, Double Side Cooled), I 1640A..... T(RMS) Continuous On State Current (+25C Heatsink Temperature, Double Side Cooled), I .... 1400A T Peak One Cycle Surge (Non Repetitive) On State Current (10ms Duration), I TSM 60% V reapplied ...................................................... 11500A RRM V 10V ................................................................ 12650A R 2 Maximum Permissible Surge Energy (V 10V), I t R 2 10ms Duration ....................................................... 8000000A s 2 3ms Duration ........................................................ 5900000A s Peak Forward Gate Current (Anode Positive with respect to Cathode), I ............... 20A FGM Peak Forward Gate Voltage (Anode Positive with respect to Cathode), V ............... 22V FGM Peak Reverse Gate Voltage, V .................................................... 5V RGM Average Gate Power, P ............................................................ 4W G Peak Gate Power (100s Pulse Width), P ......................................... 120W GM Rate of Rise of OffState Voltage (To 80% V Gate OpenCircuit), dv/dt ........... 500V/s DRM Rate of Rise of OffState Current, di/dt (Gate Drive 20V, 20 with t 1s, Anode Voltage 80% V ) r DRM Repetitive ............................................................ 500A/s Non Repetitive ...................................................... 1000A/s Operating Temperature Range, T ......................................... 40 to +125C hs Storage Temperature Range, T ........................................... 40 to +150C hs Rev. 812Characteristics: (Maximum values at T = +125C unless otherwise specified) J Peak OnState Voltage (I = 1700A), V .......................................... 1.75V TM TM Forward Conduction Threshold Voltage, V .......................................... 1.08V O Forward Conduction Slope Resistance, r ........................................... 0.395 Repetitive Peak OffState Current (At V ), I ................................... 60mA DRM DRM Repetitive Peak Reverse Current (At V ), I .................................... 60mA RRM RRM Maximum Gate Current Required to Fire All Devices (T = +25C, V = 6V, I = 2A), I .. 200mA J A A GT Maximum Gate Voltage Required to Fire All Devices (T = +25C, V = 6V, I = 2A), V ..... 3V J A A GT Maximum Holding Current (T = +25C, V = 6V, I = 2A), I .............................. 1A J A A H Maximum Gate Voltage which will Not Trigger Any Device, V ........................ 0.25V GD Thermal Resistance, JunctiontoHeatsink for a Device with a Max. Forward Voltage Drop, R thJHS Double Side Cooled .................................................... 0.044C/W Single Side Cooled ..................................................... 0.088C/W 8.500 (21.59) Max 2.290 (58.16) Max For No. 6 Screws Cathode Cathode Potential (Red) 1.343 (34.13) Max 1.060 (26.92) Gate (White) Max .040 (1.01) Min Marking 2.090 Anode (53.08) Max