NTE56051 & NTE56052 TRIAC, 8A Low Logic Level Description: The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type pack- age designed for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage (Note 1), V DRM NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (Full Sine Wave, T 102C), I (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A MB T NonRepetitive Peak OnState Current, I TSM (Full Sine Wave, T = +125C prior to Surge, with Reapplied V max) J DRM t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A 2 2 2 I t for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 12A, I = 0.2A, dI /dt = 0.2A/ s) TM G G MT (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (+), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/ s 2 Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power (Over Any 20ms Period), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoMounting Base, R thJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4K/W Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onState. The rateofrise of current should not exceed 6A/ s.Electrical Characteristics: (T = +25C unless otherwise specfied) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A 2.5 5 mA 2 GT D T MT (+), G () 3.5 5 mA 2 MT (), G () 3.5 5 mA 2 MT (), G (+) 6.5 10 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 1.6 15 mA 2 L D T MT (+), G () 8.5 20 mA 2 MT (), G () 1.2 15 mA 2 MT (), G (+) 2.5 20 mA 2 Holding Current I V = 12V, I = 0.1A 1.5 10 mA H D T OnState Voltage V I = 5A 1.4 1.7 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = V max, T = +125C 0.1 0.5 mA D D DRM J Dynamic Characteristics Critical RateofRise of dV /dt V = 67% V max, T = +125C, 5 V/ s D DM DRM J OffState Voltage Exponential Waveform, R = 1k GK Gate Controlled TurnOn Time t I = 12A, V = V max, I = 0.1A, 2 s gt TM D DRM G dI /dt = 5A/ s G .420 (10.67) Max .110 (2.79) MT 2 .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2