NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp TO3P Type Package Features: Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Maximum Ratings and Electrical Characteristics: (T = +25 C unless otherwise specified. Single A Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%) Peak Repetitive Reverse Voltage, V ............................................... 45V RRM Working Peak Reverse Voltage, V ................................................ 45V RWM DC Blocking Voltage, V ............................................................ 45V R RMS Reverse Voltage, V ...................................................... 32V R(RMS) Average Rectified Output Current (T = +100 C), I C O Per Device .................................................................. 30A Per Diode ................................................................... 15A Non Repetitive Peak Forward Surge Current, I FSM (8.3ms Single Half Sine Wave Surge Superimposed on Rated Load) .............. 250A Forward Voltage Drop (Per Diode, I = 15A), V F FM T = +25 C ................................................................ 0.55V J T = +125 C ............................................................... 0.50V J Peak Reverse Current (V = 45V), I R RM T = +25 C ................................................................ 1.0mA J T = +100 C ............................................................... 20mA J Typical Junction Capacitance (Note 1), C ........................................... 750pF J Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Peak Surge Junction Temperature (Forward Current Applied), T ................... +175 C J(pk) Thermal Resistance, Junction toCase (Per Diode), R .......................... 1.4 C/W thJC Thermal Resistance, Junction toAmbient (Per Diode), R ........................ 40 C/W thJA Note 1. Measured at 1MHz and applied reverse voltage of 4.0V DC. Rev. 714TO3P Type Package .197 (5.0) .638 (16.2) Max K .217 (5.5) .906 (23.0) Max .480 .130 (12.2) (3.3) Dia .748 (19.0) Min AK A .215 (5.47)