NTE6354 thru NTE6365 Silicon Power Rectifier Diode 300 Amp, DO9 Features: Diffused Diode High Voltage Ratings up to 1600 Volts High Surge Current Capabilities Available in Cathode toCase (Standard) or AnodetoCase (Reverse Polarity) Style Ratings and Characteristics: Average Forward Current (T = +130C Max), I ................................... 300A C F(AV) Maximum Repetitive Peak Reverse Voltage, V RRM NTE6354, NTE6355* ........................................................ 400V NTE6356, NTE6357* ........................................................ 600V NTE6358, NTE6359* ....................................................... 1000V NTE6362, NTE6363* ....................................................... 1400V NTE6364, NTE6365* ....................................................... 1600V Maximum Non Repetitive Peak Reverse Voltage, V RSM NTE6354, NTE6355* ........................................................ 500V NTE6356, NTE6357* ........................................................ 720V NTE6358, NTE6359* ....................................................... 1200V NTE6362, NTE6363* ....................................................... 1500V NTE6364, NTE6365* ....................................................... 1700V Maximum Repetitive Peak Reverse Current (T = +200C), I J RRM NTE6354, NTE6355* ....................................................... 40mA NTE6356, NTE6357* ....................................................... 40mA NTE6358, NTE6359* ....................................................... 30mA NTE6362, NTE6363* ....................................................... 30mA NTE6364, NTE6365* ....................................................... 30mA Maximum Forward Surge Current, I FSM 50Hz ..................................................................... 5000A 60Hz ..................................................................... 5200A 2 Fusing Current, I t 2 50Hz ................................................................ 214000A s 2 60Hz ................................................................ 195000A s Operating Junction Temperature, T ........................................ 40 to +180C J * Indicated Anode toCase polarity, Cathode toCase polarity is standard. Rev. 619Electrical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Average Forward Current I 180 sinusoidal condition, T = +130C Max 300 A F(AV) C Maximum Peak OneCycle I t = 10ms No voltage 5000 A FSM NonRepetitive Surge Current reapplied t = 8.3ms 5200 A 100% V t = 10ms 3800 A RRM reapplied t = 8.3ms 4000 A Sinusoidal half wave, 2 2 2 Initial T = T max Maximum I t for Fusing I t t = 10ms No voltage J J 214000 A s reapplied 2 t = 8.3ms 195000 A s 2 2 Maximum I t for Individual Device 100% V t = 10ms 151000 A s RRM Fusing reapplied 2 t = 8.3ms 138000 A s 2 2 2 Maximum I t I t t = 0.1 to 10ms, no voltage reapplied 2140000 A t Maximum Value of Threshold V T = +200C 0.610 V M (TO) J Voltage Maximum Value of Forward Slope r T = +200C 0.751 m t J Resistance ThermalMechanical Specifications: Parameter Symbol Test Conditions Rating Unit Maximum Operation Junction Temperature T 40 to + 180 C J Maximum Storage Temperature T 55 to + 180 C stg Maximum Internal Thermal Resistance R DC operation 0.18 K/W thJC JunctiontoCase Thermal Resistance, CasetoSink R Mounting surface flat, smooth and 0.08 K/W thCS greased Mounting Torque T Nonlubricated threads 40.06 m N (360) (in lb)
