NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in highgain, low noise smallsignal amplifiers and applications requiring fast switching times. Features: High Current GainBandwidth Product: f = 4.5GHz Typ I = 15mA T C Low Noise Figure: NF = 2dB Typ f = 1GHz High Power Gain: G = 10dB Min f = 1GHz pe Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I 30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 15 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 25 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 2 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 50 nA CBO CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 5mA, V = 5V 30 80 200 FE C CE Dynamic Characteristics Current GainBandwidth Product f I = 15mA, V = 10V, 4.5 GHz T C CE f = 1GHz CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 0.4 1.0 pF cb CB E Noise Figure NF I = 5mA, V = 6V, f = 1GHz 2.0 2.5 dB C CE Functional Tests CommonEmitter Amplifier Power Gain G V = 6V, I = 5mA, f = 1GHz 10 12 dB pe CC C Third Order Intercept I = 5mA, V = 6V, +23 dBm C CE f = 0.9GHz .075 (1.9) Min C Seating Plane .770 (19.5) Max EE .190 (4.83) Dia .325 (8.27) Max B .036 (0.92)
