X-On Electronics has gained recognition as a prominent supplier of NTE64 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE64 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE64 NTE

NTE64 electronic component of NTE
NTE64 NTE
NTE64 Bipolar Transistors - BJT
NTE64  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE64
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 15V; 30mA; 375mW
Datasheet: NTE64 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 4.563 ea
Line Total: USD 68.44 
Availability - 212
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
212
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 15
Multiples : 1
15 : USD 4.563
100 : USD 3.35
250 : USD 3.25
500 : USD 3.1625
1000 : USD 2.9875
2500 : USD 2.9
5000 : USD 2.8625
7500 : USD 2.7625

   
Manufacturer
Product Category
Kind Of Transistor
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE64 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE64 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in highgain, low noise smallsignal amplifiers and applications requiring fast switching times. Features: High Current GainBandwidth Product: f = 4.5GHz Typ I = 15mA T C Low Noise Figure: NF = 2dB Typ f = 1GHz High Power Gain: G = 10dB Min f = 1GHz pe Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I 30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 15 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 25 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 2 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 50 nA CBO CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 5mA, V = 5V 30 80 200 FE C CE Dynamic Characteristics Current GainBandwidth Product f I = 15mA, V = 10V, 4.5 GHz T C CE f = 1GHz CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 0.4 1.0 pF cb CB E Noise Figure NF I = 5mA, V = 6V, f = 1GHz 2.0 2.5 dB C CE Functional Tests CommonEmitter Amplifier Power Gain G V = 6V, I = 5mA, f = 1GHz 10 12 dB pe CC C Third Order Intercept I = 5mA, V = 6V, +23 dBm C CE f = 0.9GHz .075 (1.9) Min C Seating Plane .770 (19.5) Max EE .190 (4.83) Dia .325 (8.27) Max B .036 (0.92)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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