NTE909 NTE

NTE909 & NTE909D Integrated Circuits Operational Amplifier Description: These devices are monolithic operational amplifiers intended for generalpurpose applications. Op- eration is completely specified over the range of voltages commonly used for these devices. The de- sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the classB output stage gives a large output capability with minimum power drain. External components are used to frequency compensate the amplifier. Although the unitygain com- pensation network specified will make the amplifiers unconditionally stable in all feedback configura- tions, compensation can be tailored to optimize highfrequency performance for any gain setting. The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am- plifier. Absolute Maximum Ratings: Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Output ShortCircuit Duration (T = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 seconds A Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70C Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Note 1 For operating at elevated temperatures, the device must be derated based on a 100C maxi- mum junction temperature and a thermal resistance 150C/W junction to ambient or 45C/W, junction to case for the metal can package. Electrical Characteristics: (0C T = +70C, 9V V 15V, C1 = 5000pF, R1 = 1.5k, A S C2 = 200pF and R2 = 51 unless otherwise specified) Parameter Test Conditions Min Typ Max Unit Input Offset Voltage T = +25C, R 10k 2.0 7.5 mV A S Input Bias Current T = +25C 300 1500 nA A T = T 0.36 2.0 A A MIN Input Offset Current T = +25C 100 500 nA A T = T 75 400 nA A MIN T = T 125 750 nA A MAXElectrical Characteristics (Contd): (0C T = +70C, 9V V 15V, C1 = 5000pF, A S R1 = 1.5k, C2 = 200pF and R2 = 51 unless otherwise specified) Parameter Test Conditions Min Typ Max Unit Input Resistance T = +25C 50 250 k A T = T 50 250 k A MIN Output Resistance T = +25C 150 A Supply Current T = +25C, V = 15V 2.6 6.6 mA A S Transient Response Risetime V = 20mV, C 100pF, T = +25C 0.3 1.0 s IN L A Transient Response Overshoot 10 30 % Slew Rate T = +25C 0.25 V/ s A Average Temperature Coefficient R = 50 , T = +25C to T 6.0 V/C S A MAX of Input Offset Voltage R = 50 , T = +25C to T 12 V/C S A MIN Large Signal Voltage V = 15V, R 2k , V = 10V 15 45 V/mV S L OUT Output Voltage Swing V = 15V, R = 10k 12 14 V S L V = 15V, R = 2k 10 13 V S L Input Voltage Range V = 15V 8 10 V S Common Mode Rejection Ratio R 10k 65 90 dB S Supply Voltage Rejection Ratio R 10k 25 200 V/V S Pin Connection Diagram NTE909 NTE909D (Top View) Output Freq Comp 5 N.C. 1 14 N.C. Output V () 6 4 N.C. 2 13 N.C. Input Freq Comp A 3 12 Input Freq Comp B Invert Input 4 11 V (+) V (+) 7 3 NonInvert Input NonInvert Input 5 10 Output V () 6 9 Output Freq Comp 8 2 Input Freq Comp B Invert Input 1 N.C. 7 8 N.C. Input Freq Comp A