NTE912 Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One DifferentiallyConnected Transistor Pair) Description: The NTE912 consists of five generalpurpose silicon NPN transistors on a common monolithic sub- strate in a 14Lead DIP type package. Two of the transistors are internally connected to form a differ- entiallyconnected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How- ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec- trical and thermal matching. Features: Two Matched Pairs of Transistors: V matched 5mV BE Input Offset Current 2 A Max. I = 1mA C 5 General Purpose Monolithic Transistors Operation from DC to 120MHz Wide Operating Current Range Low Noise Figure: 3.2dB Typ 1kHz Applications: General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF Custom Designed Differential Amplifiers Temperature Compensated Amplifiers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Power Dissipation (T +55C), P A D Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/C Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO Collector Substrate Voltage (Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CIO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case, 10sec max), T . . . . . . . . . . . +265C L Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub- strate (Pin13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Base Breakdown Voltage V I = 10 A, I = 0 20 60 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, I = 0 15 24 V (BR)CEO C B Collector Substrate Breakdown Voltage V I = 10 A, I = 0 20 60 V (BR)CIO C CI Emitter Base Breakdown Voltage V I = 10 A, I = 0 5 7 V (BR)EBO E C Collector Cutoff Current I V = 10V, I = 0 0.002 40 nA CBO CB E I V = 10V, I = 0 0.5 A CEO CE B Static Forward Current Transfer Ratio h V = 3V I = 10mA 100 FE CE C I = 1mA 40 100 C I = 10 A 54 C Input Offset Current for Matched Pair V = 3V, I = 1mA 0.3 2.0 A CE C Q and Q . I I 1 2 IO IO 1 2 Base Emitter Voltage V V = 3V I = 1mA 0.715 V BE CE E I = 10mA 0.800 V E Magnitude of Input Offset Voltage for V = 3V, I = 1mA 0.45 5.0 mV CE C Differential Pair V V BE BE 1 2 Magnitude of Input Offset Voltage for V = 3V, I = 1mA 0.45 5.0 mV CE C V V Isolated Transistors BE BE 3 4 V V V V BE BE BE BE 4 5 5 3 Temperature Coefficient of Base Emitter V V = 3V, I = 1mA 1.9 mV/C BE CE C Voltage T Collector Emitter Saturation Voltage V I = 1mA, I = 10mA 0.23 V CES B C Temperature Coefficient: V V = 3V, I = 1mA 1.1 V/C IO CE C Magnitude of InputOffset Voltage T Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics LowFrequency Noise Figure NF f = 1kHz, V = 3V, I = 100 A, 3.25 dB CE C Source Resistance = 1k LowFrequency, SmallSignal Equivalent Circuit Characteristics: Forward Current Transfer Ratio h 110 f = 1kHz, V = 3V, I = 1mA fe CE C ShortCircuit Input Impedance h 3.5 k ie OpenCircuit Output Impedance h 15.6 mhos oe 4 OpenCircuit Reverse Voltage h 1.8x10 re Transfer Ratio Admittance Characteristics: Forward Transfer Admittance Y f = 1kHz, V = 3V, I = 1mA 31j1.5 fe CE C Input Admittance Y 0.3+j0.04 ie Output Admittance Y 0.001+j0.03 oe