ACTT6G-800E,127 NXP

ACTT6G-800E AC Thyristor Triac power switch 15 August 2014 Product data sheet 1. General description AC Thyristor Triac power switch in a SOT226A (I2PAK) plastic package with self- protective clamping capabilities against low and high energy transients. 2. Features and benefits Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Sensitive gate for easy logic level triggering Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 51 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j I RMS on-state current full sine wave T 108 C Fig. 1 - - 6 A T(RMS) mb Fig. 2 Fig. 3 V peak pulse voltage T = 25 C non-repetitive, off-state - - 2 kV PP j Fig. 6 Scan or click this QR code to view the latest information for this product I2PAKNXP Semiconductors ACTT6G-800E AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 100 mA LD+ G+ - - 10 mA GT D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD+ G- - - 10 mA D T T = 25 C Fig. 8 j V = 12 V I = 100 mA LD- G- - - 10 mA D T T = 25 C Fig. 8 j V clamping voltage I = 0.1 mA t = 1 ms T = 25 C 850 - - V CL CL p j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 13 dI /dt rate of change of V = 400 V T = 125 C I = 6 A 10 - - A/ms com D j T(RMS) commutating current dV /dt = 1 V/s gate open circuit com Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol LD 1 CM common 2 LD load G 3 G gate CM mb LD mounting base load 003aaf296 1 2 3 I2PAK (SOT226A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACTT6G-800E I2PAK plastic single-ended package (I2PAK) TO-262 SOT226A ACTT6G-800E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 15 August 2014 2 / 13