BAP51-06W,115 NXP

BAP51-06W Silicon PIN diode Rev. 2.1 8 February 2019 Product data sheet 1 Product profile 1.1 General description Two planar PIN diodes in common anode configuration in an SOT323 small SMD plastic package. 1.2 Features and benefits Two elements in common anode configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified 1.3 Applications General RF applications 2 Pinning information Table 1.Discrete pinning Pin Description Simplified outline Graphic symbol 1 cathode 1 3 2 cathode 2 3 3 common cathode 2 1 aaa-029922 1 2 sot323 so 3 Ordering information Table 2.Ordering information Type number Package Name Description Version BAP51-06W - plastic surface-mounted package 3 leads SOT323 SOT323NXP Semiconductors BAP51-06W Silicon PIN diode 4 Marking Table 3.Marking Type number Marking code Description BAP51-06W W7% % = p: made in Hong Kong % = t: made in Malaysia 5 Limiting values Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 50 V R I forward current - 50 mA F P total power dissipation T 90 C - 240 mW tot sp T storage temperature -65 +150 C stg T junction temperature -65 +150 C j 6 Thermal characteristics Table 5.Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to 250 K/W th(j-sp) solder point BAP51-06W All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 2.1 8 February 2019 2 / 10