BAP64-06W,115 NXP

BAP64-06 Silicon PIN diode Rev. 5.0 22 March 2019 Product data sheet 1 Product profile 1.1 General description Two planar PIN diodes in common anode configuration in a SOT23 small SMD plastic package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz AEC-Q101 qualified 1.3 Applications RF attenuators and switches 2 Pinning information Table 1.Discrete pinning Pin Description Simplified outline Symbol 1 cathode 1 3 3 2 cathode 2 1 2 3 common connection aaa-017781 1 2 top viewNXP Semiconductors BAP64-06 Silicon PIN diode 3 Ordering information Table 2.Ordering information Type number Package Name Description Version BAP64-06 - plastic surface-mounted package 3 leads SOT23 4 Marking Table 3.Marking Type number Marking Description BAP64-06 6K* * = t : made in Malaysia * = W : made in China 5 Limiting values Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Values are specified per diode. Symbol Parameter Conditions Min Max Unit V reverse voltage - 175 V R I forward current - 100 mA F P total power dissipation T = 90 C - 250 mW tot sp T storage temperature -65 +150 C stg T junction temperature -65 +150 C j 6 Thermal characteristics Table 5.Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to solder point 220 K/W th(j-sp) 7 Characteristics Table 6.Characteristics Values are specified per diode T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 50 mA - 0.95 1.1 V F F I reverse current V = 60 V - - 10 A R R V = 20 V - - 1 A R C diode capacitance see Figure 1 f = 1 MHz d V = 0 V - 0.52 - pF R BAP64-06 All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 5.0 22 March 2019 2 / 9