BAR1.../BAR61... Silicon PIN Diode RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR14-1 BAR15-1 BAR16-1 BAR61 Type Package Configuration L (nH) Marking S BAR14-1 SOT23 series 1.8 L7s BAR15-1 SOT23 common cathode 1.8 L8s BAR16-1 SOT23 common anode 1.8 L9s BAR61 SOT143 PI element 2 61s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 100 V Diode reverse voltage V R 140 mA Forward current I F 250 mW Total power dissipation P tot T 65C S 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 340 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-04-19 1BAR1.../BAR61... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 50 V - - 100 R V = 100 V - - 1000 R - 1.05 1.25 V Forward voltage V F I = 100 mA F AC Characteristics pF Diode capacitance C T V = 0 V, f = 100 MHz - 0.2 0.5 R V = 50 V, f = 1 MHz - 0.25 0.5 R - 50 100 Zero bias conductance g S P V = 0 V, f = 100 MHz R Forward resistance r f I = 0.01 mA, f = 100 MHz - 2600 4200 F I = 0.1 mA, f = 100 MHz 300 470 - F I = 1 mA, f = 100 MHz 35 55 85 F I = 10 mA, f = 100 MHz 5.5 8 12 F 700 1000 - ns Charge carrier life time rr I = 10 mA, I = 6 mA, measured at I = 3 mA, F R R R = 100 L I-region width W - 146 - m I 2007-04-19 2