BAT18,235 NXP

BAT18 Silicon planar diode Rev. 02 31 August 2004 Product data sheet 1. Product prole 1.1 General description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.0 pF Low diode forward resistance: max. 0.7 . 1.3 Applications Band switching. 2. Pinning information Table 1: Pinning Pin Description Simplied outline Symbol 1 anode 3 2 not connected 3 3 cathode 1 2 sym044 12 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BAT18 - plastic surface mounted package 3 leads SOT23BAT18 Philips Semiconductors Silicon planar diode 4. Marking Table 3: Marking 1 Type number Marking code BAT18 10* 1 * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V continuous reverse voltage - 35 V R I continuous forward current - 100 mA F T storage temperature - 55 +125 C stg T junction temperature - 125 C j 6. Thermal characteristics Table 5: Thermal characteristics T = 25 C unless otherwise specied. j Symbol Parameter Conditions Typ Unit R thermal resistance from junction to tie-point 330 K/W th(j-tp) 1 R thermal resistance from junction to ambient 500 K/W th(j-a) 1 Device mounted on a FR4 printed-circuit board. 7. Characteristics Table 6: Electrical characteristics Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 100 mA see Figure 1 - - 1.2 V F F I reverse current see Figure 2 R V = 20 V - - 100 nA R V = 20 V T =60 C --1 A R j C diode capacitance V = 20 V f = 1 MHz see Figure 3 - 0.8 1.0 pF d R r diode forward I = 5 mA f = 200 MHz see Figure 4 - 0.5 0.7 D F resistance 9397 750 13385 Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 31 August 2004 2 of 7