BC857AT,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheet BC856T; BC857T PNP general purpose transistors series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification, especially in portable equipment. DESCRIPTION handbook, halfpage PNP transistor in an SC-75 (SOT416) plastic package. 3 3 NPN complements: BC846T; BC847T series. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE Top view MAM362 BC856AT 3A BC856BT 3B BC857AT 3E Fig.1 Simplified outline (SC-75; SOT416) and BC857BT 3F symbol. BC857CT 3G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC856AT; BC856BT 80 V BC857AT; BC857BT; BC857CT 50 V V collector-emitter voltage open base CEO BC856AT; BC856BT 65 V BC857AT; BC857BT; BC857CT 45 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C; note 1 150 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2