BT152-400R/B NXP

DISCRETE SEMICONDUCTORS BT152 series Thyristors Product specification March 1997 Semiconductors Product specification Thyristors BT152 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors ina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 400R 600R 800R bidirectional blocking voltage V , Repetitive peak off-state 450 650 800 V DRM capability and high thermal cycling V voltages RRM performance. Typical applications I Average on-state current 13 13 13 A T(AV) include motor control, industrial and I RMS on-state current 20 20 20 A T(RMS) domestic lighting, heating and static I Non-repetitive peak on-state 200 200 200 A TSM switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab 1 cathode ak 2 anode 3 gate g 123 tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -400R -600R -800R 1 1 V Repetitive peak off-state - 450 650 800 V DRM voltages I Average on-state current half sine wave T 103 C - 13 A T(AV) mb I RMS on-state current all conduction angles - 20 A T(RMS) I Non-repetitive peak half sine wave T = 25 C prior to TSM j on-state current surge t = 10 ms - 200 A t = 8.3 ms - 220 A 2 2 2 ItI t for fusing t = 10 ms - 200 A s dI /dt Repetitive rate of rise of I = 50 A I = 0.2 A - 200 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 5 A GM V Peak gate voltage - 5 V GM V Peak reverse gate voltage - 5 V RGM P Peak gate power - 20 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. March 1997 1 Rev 1.200