Product Information

BYC58X-600

BYC58X-600 electronic component of NXP

Datasheet
DIODE, REC, UFAST, 600V, 8A, TO-220F
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.969 ea
Line Total: USD 39.69

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10
Multiples : 1
10 : USD 3.969

Read More Specifications

     
Manufacturer
Product Category
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Packaging
Svhc
Diode Type
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

BYC58X-600 8 A hyperfast rectifier diode Rev. 01 23 February 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package specifically for use in CCM PFC applications for reduced switching losses. 1.2 Features and benefits Allows use of smaller MOSFETs and Low thermal resistance heatsinks Reduces switching losses in Isolated package associated MOSFET Low reverse recovery current Superfast switching 1.3 Applications Continuous Current Mode (CCM) Power supply adapters Power Factor Correction (PFC) Server power supplies Desk top computer power supplies Telecom power supplies Flat panel TV power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 600 V RRM reverse voltage I average forward square-wave pulse = 0.5 --8 A F(AV) current T 93 C see Figure 1 and 2 h I non-repetitive peak T =25C t = 10 ms --110 A FSM j(init) p forward current sine-wave pulse T =25C t =8.3 ms - - 120 A j(init) p sine-wave pulse R thermal resistance with heatsink compound -2.5 3 K/W th(j-h) from junction to see Figure 3 heatsinkBYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics t reverse recovery I =8A V =400 V - 12.5 - ns rr F R time dI /dt = 200 A/s T =25C F j see Figure 6 I =8A V =400 V -21 - ns F R dI /dt = 200 A/s T = 125 C F j see Figure 6 and 7 Q recovered charge I =8A V =400 V -40 - nC r F R dI /dt = 200 A/s T = 125 C F j see Figure 5 and 6 Static characteristics V forward voltage I =8A T =25C - 2.35 3.2 V F F j see Figure 4 I =8A T =150 C -2 2.4 V F j see Figure 4 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC58X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOD113 hole 2-lead TO-220full pac BYC58X-600 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 23 February 2010 2 of 11

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