BYC8-600,127 NXP

BYC8-600 Hyperfast power diode Rev.02 - 26 November 2019 Product data sheet 1. General description Hyperfast power diode in a 2-lead TO220 plastic package. 2. Features and benefits Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average forward = 0.5 T 109 C square-wave - - 8 A F(AV) mb current pulse Fig. 1 Fig. 2 Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 1.4 1.85 V F F j Dynamic characteristics t reverse recovery time I = 8 A V = 400 V dI /dt = 500 A/s - 19 - ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYC8-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYC8-600 TO220 BYC8-600,127 Tube 50 SOD59 27-Nov-2012 BYC8-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 26 November 2019 2 / 10