BYQ28E-200/H,127 NXP

BYQ28 series E and ED Rectier diodes ultrafast, rugged Rev. 04 5 December 2007 Product data sheet 1. Product prole 1.1 General description Ultrafast, dual common cathode, epitaxial rectier diodes in a SOT78 (TO-220AB) and a SOT428 (DPAK) plastic package. 1.2 Features n Fast switching n Low thermal resistance n Soft recovery characteristic n Low forward voltage drop n Reverse surge capability n High thermal cycling performance 1.3 Applications n Output rectiers in high-frequency switched-mode power supplies 1.4 Quick reference data n V 200 V n I 10 A RRM O(AV) n V 0.895 V n t = 10 ns (typ) F rr 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 anode 1 mb mb 1 2 cathode 1 3 3 anode 2 2 sym084 mb mounting base cathode 2 1 3 SOT428 (DPAK) 12 3 SOT78 (3-lead TO-220AB) 1 It is not possible to connect to pin 2 of the SOT428 package.BYQ28 series E and ED NXP Semiconductors Rectier diodes ultrafast, rugged 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BYQ28E-200 TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB BYQ28ED-200 DPAK plastic single-ended surface-mounted package (DPAK) 3-leads (one lead SOT428 cropped) 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 200 V RRM V crest working reverse voltage - 200 V RWM V reverse voltage square waveform = 1.0 - 200 V R I average output current square waveform = 0.5 -10 A O(AV) T 119 C both diodes conducting mb I repetitive peak forward current t =25 s square waveform = 0.5 -10 A FRM p T 119 C per diode mb I non-repetitive peak forward t = 10 ms sinusoidal waveform per -50 A FSM current diode t = 8.3 ms sinusoidal waveform per -55 A diode I peak reverse recovery current t =2 s = 0.001 - 0.2 A RM p I non-repetitive peak reverse t = 100 s - 0.2 A RSM p current T storage temperature - 40 +150 C stg T junction temperature - 150 C j Electrostatic discharge V electrostatic discharge voltage all pins human body model -8 kV ESD C = 250 pF R = 1.5 k BYQ28 SER E ED 4 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 5 December 2007 2 of 10