BYQ28X-200,127 NXP

BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 03 18 July 2018 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package. 1.2 Features and benefits Fast switching Low on-state losses Guaranteed ESD capability Soft recovery minimizes power-consuming oscillations High thermal cycling performance 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 200 V RRM reverse voltage I average output SQW =0.5 T 92 C --10 A O(AV) h current both diodes conducting see Figure 1 see Figure 2 I repetitive peak SQW =0.5 t =25s --10 A FRM p forward current T 92 C per diode h Dynamic characteristics t reverse recovery I =1A V =30V - 1525ns rr F R time dI /dt = 100 A/s F T = 25 C ramp recovery j see Figure 5 Static characteristics V forward voltage I =5A T =150 C see - 0.8 0.895 V F F j Figure 4 Electrostatic discharge V electrostatic HBM C = 250 pF --8 kV ESD discharge voltage R=1.5k all pinsWeEn Semiconductors BYQ28X-200 Dual ultrafast rugged rectifier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb n.c. mounting base isolated 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYQ28X-200 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOT186A hole 3-lead TO-220full pac All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved BYQ28X-200 3 Product data sheet Rev. 03 18 July 2018 2 of 10