Product Information

BYV10-600PQ

BYV10-600PQ electronic component of NXP

Datasheet
NXP Semiconductors Rectifiers Ultrafast pwr diode

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9596 ea
Line Total: USD 0.96

6240 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3799 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.6221
10 : USD 0.5428
100 : USD 0.3852
500 : USD 0.3266
1000 : USD 0.2863
2000 : USD 0.2576
5000 : USD 0.2484
10000 : USD 0.2323
25000 : USD 0.2323

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BYV10-600P Ultrafast power diode 26 September 2018 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Fast switching Low leakage current Low forward voltage drop Low thermal resistance Soft recovery characteristic 3. Applications High frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I average forward = 0.5 T 109 C square-wave - - 10 A F(AV) mb current pulse Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 88 A p j(init) pulse Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 2 V F F j I = 10 A T = 150 C Fig. 6 - - 1.6 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 35 50 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV10-600P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV10-600P TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC BYV10-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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