BYQ30E-200,127 NXP

BYQ30E-200 Dual ultrafast power diode Rev.05 - 5 June 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Fast switching Low thermal resistance High thermal cycling performance Low forward voltage drop Reverse surge capability Soft recovery characteristic 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current = 0.5 square-wave pulse T 104 C 16 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 104 C 16 A FRM p mb current square-wave pulse per diode I non-repetitive peak t = 10 ms sine-wave pulse per diode 80 A FSM p forward current T = 25 C j(init) t = 8.3 ms sine-wave pulse per diode 88 A p T = 25 C j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 0.84 0.95 V F F j Dynamic characteristics t reverse recovery time I = 1 A I = 0.5 A I = 0.25 A - 12 22 ns rr R F R(meas) T = 25 C step recovery Fig. 6 jWeEn Semiconductors BYQ30E-200 Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 A1 anode 1 2 K cathode A1 A2 3 A2 anode 2 K mb K mounting base cathode sym125 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYQ30E-200 TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking codes BYQ30E-200 BYQ30E-200 BYQ30E-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 June 2018 2 / 11