Product Information

BYQ30E-200,127

BYQ30E-200,127 electronic component of NXP

Datasheet
Rectifiers RAIL REC-EPI
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3942 ea
Line Total: USD 1.39

1201 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1165 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9625
10 : USD 0.7693
100 : USD 0.6233
500 : USD 0.5439
1000 : USD 0.4554
2000 : USD 0.4358
5000 : USD 0.4152
10000 : USD 0.4025
25000 : USD 0.4025

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Rohs Mouser
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYQ30E-200 Dual ultrafast power diode Rev.05 - 5 June 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Fast switching Low thermal resistance High thermal cycling performance Low forward voltage drop Reverse surge capability Soft recovery characteristic 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current = 0.5 square-wave pulse T 104 C 16 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 104 C 16 A FRM p mb current square-wave pulse per diode I non-repetitive peak t = 10 ms sine-wave pulse per diode 80 A FSM p forward current T = 25 C j(init) t = 8.3 ms sine-wave pulse per diode 88 A p T = 25 C j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 0.84 0.95 V F F j Dynamic characteristics t reverse recovery time I = 1 A I = 0.5 A I = 0.25 A - 12 22 ns rr R F R(meas) T = 25 C step recovery Fig. 6 jWeEn Semiconductors BYQ30E-200 Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 A1 anode 1 2 K cathode A1 A2 3 A2 anode 2 K mb K mounting base cathode sym125 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYQ30E-200 TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking codes BYQ30E-200 BYQ30E-200 BYQ30E-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 June 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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