BYR29X-800,127 NXP

BYR29X-800 Ultrafast power diode 19 October 2017 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low forward voltage drop Soft recovery characteristic 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 800 V R I average forward = 0.5 T 73 C SQW Fig. 1 1 - - 8 A F(AV) h current Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 73 C SQW - - 16 A FRM p h current I non-repetitive peak t = 10 ms T = 25 C SIN - - 60 A FSM p j(init) forward current t = 8.3 ms T = 25 C SIN - - 66 A p j(init) Static characteristics V forward voltage I = 8 A T = 150 C Fig. 5 - 1.07 1.5 V F F j I = 20 A T = 25 C Fig. 5 - 1.75 1.95 V F j I = 8 A T = 25 C - - 1.7 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 60 75 ns rr F R F T = 25 C Fig. 6 Fig. 7 j 1 Neglecting switching and reverse current lossesWeEn Semiconductors BYR29X-800 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYR29X-800 TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac BYR29X-800 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 19 October 2017 2 / 11