BYC8B-600,118 NXP

DISCRETE SEMICONDUCTORS DDATA SHEET BYC8B-600 Rectifier diode ultrafast, low switching loss Product specification March 2001 Semiconductors Product specification Rectifier diode BYC8B-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA Extremely fast switching V = 600 V R Low reverse recovery current Low thermal resistance V 1.85 V F k a Reduces switching losses in tab 3 associated MOSFET I = 8 A F(AV) t = 19 ns (typ) rr APPLICATIONS PINNING SOT404 Active power factor correction PIN DESCRIPTION tab Half-bridge lighting ballasts Half-bridge/ full-bridge switched 1 no connection mode power supplies. 1 2 cathode The BYC8B-600 is supplied in the SOT404 surface mounting 3 anode 2 package. tab cathode 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Peak repetitive reverse voltage - 600 V RRM V Crest working reverse voltage - 600 V RWM V Continuous reverse voltage T 110 C - 500 V R mb I Average forward current = 0.5 with reapplied V - 8 A F(AV) RRM(max) T 82 C mb I Repetitive peak forward current = 0.5 with reapplied V - 16 A FRM RRM(max) T 82 C mb I Non-repetitive peak forward t = 10 ms - 55 A FSM current. t = 8.3 ms - 60 A sinusoidal T = 150C prior to surge j with reapplied V RWM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to - - 2.2 K/W th j-mb mounting base R Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W th j-a ambient 1 it is not possible to make connection to pin 2 of the SOT404 package March 2001 1 Rev 1.400