BYQ28E-200E,127 NXP

BYQ28E-200E Dual ultrafast power diodes Rev. 4 14 July 2011 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 1.2 Features and benefits Fast switching Low on-state losses Guaranteed ESD capability Low thermal resistance High thermal cycling performance Soft recovery minimizes power-consuming oscillations 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse --200V RRM voltage I average output current square-wave pulse =0.5 --10 A O(AV) T 119 C both diodes mb conducting see Figure 1 see Figure 2 I repetitive peak forward =0.5 t = 25 s --10 A FRM p current T 119 C per diode mb square-wave pulse Static characteristics V forward voltage I =5A T = 150 C - 0.8 0.89 V F F j see Figure 4 5 Dynamic characteristics t reverse recovery time I =1A V =30V - 1525ns rr F R dI /dt = 100 A/s T =25C F j ramp recovery see Figure 5 Electrostatic discharge V electrostatic discharge HBM C = 250 pF R = 1.5 k --8 kV ESD voltage all pins TO-220ABBYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb K mounting base cathode 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYQ28E-200E TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BYQ28E-200E All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 14 July 2011 2 of 11