BYC8DX-600,127 NXP

BYC8DX-600 Hyperfast power diode Rev.02 - 29 January 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Isolated plastic package Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T = 47 C 8 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 47 C 16 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 55 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 60 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 4 - 2 2.9 V F F j I = 8 A T = 150 C Fig. 4 - 1.5 1.85 V F j Dynamic characteristics t reverse recovery time I = 8 A V = 400 V dI /dt = 500 A/s - 20 - ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYC8DX-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC8DX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYC8DX-600 BYC8DX-600 BYC8DX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 January 2018 2 / 11