X-On Electronics has gained recognition as a prominent supplier of MD7IC2250GNR1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MD7IC2250GNR1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MD7IC2250GNR1 NXP

MD7IC2250GNR1 electronic component of NXP
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Part No.MD7IC2250GNR1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier HV7IC 2100MHZ TO270WB14G
Datasheet: MD7IC2250GNR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 96.3986 ea
Line Total: USD 96.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MD7IC2250GNR1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MD7IC2250GNR1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MD7IC2250N FreescaleSemiconductor Rev. 0, 12/2010 TechnicalData RFLDMOSWidebandIntegrated MD7IC2250NR1 PowerAmplifiers The MD7IC2250N wideband integrated circuit is designed with on--chip MD7IC2250GNR1 matching that makes it usablefrom 2000to 2200MHz. This multi--stage MD7IC2250NBR1 structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts, DD I =80mA,I = 520mA, P = 5.3Watts Avg., DQ1(A+B) DQ2(A+B) out 2110--2170MHz,5.3WAVG.,28V IQ MagnitudeClipping, ChannelBandwidth= 3.84MHz, Input Signal SINGLEW--CDMA PAR = 7.5dB 0.01%Probability onCCDF. RFLDMOSWIDEBAND G PAE ACPR INTEGRATEDPOWERAMPLIFIERS ps Frequency (dB) (%) (dBc) 2110MHz 31.2 17.0 --48.3 CASE1618--02 TO--270WB--14 2140MHz 31.1 16.8 --49.3 PLASTIC 2170MHz 31.1 16.8 --50.1 MD7IC2250NR1 Capableof Handling10:1VSWR, 32Vdc, 2140MHz, 63Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out CASE1621--02 Typical P 1dB CompressionPoint 54Watts CW out TO--270WB--14GULL Features PLASTIC MD7IC2250GNR1 CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) CASE1617--02 IntegratedQuiescent Current TemperatureCompensationwith TO--272WB--14 (1) Enable/DisableFunction PLASTIC IntegratedESD Protection MD7IC2250NBR1 Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. V DS1A V 1 DS1A V 2 GS2A RF RF /V inA out1 DS2A 14 V 3 GS1A RF /V out1 DS2A RF 4 inA NC 5 V NC 6 GS1A QuiescentCurrent NC 7 (1) V TemperatureCompensation GS2A NC 8 RF 9 13 RF /V inB out2 DS2B V GS1B QuiescentCurrent V 10 GS1B (1) V TemperatureCompensation V 11 GS2B GS2B V 12 DS1B (TopView) RF inB RF /V out2 DS2B Note: Exposed backside of the package is V thesourceterminalforthetransistors. DS1B Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 28 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,5.3W CW,2170MHz Stage1,28Vdc,I =80mA 5.3 DQ1(A+B) Stage2,28Vdc,I =520mA 1.1 DQ2(A+B) CaseTemperature80C,50W CW,2170MHz Stage1,28Vdc,I =80mA 5.0 DQ1(A+B) =520mA Stage2,28Vdc,I 0.95 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) II (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) Stage1 -- OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1 -- OnCharacteristics (4) GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =23Adc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =80mA) DS DQ1(A+B) FixtureGateQuiescentVoltage V 6.0 7.0 8.0 Vdc GG(Q) (V =28Vdc,I =80mA,MeasuredinFunctionalTest) DD DQ1(A+B) 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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