X-On Electronics has gained recognition as a prominent supplier of PBSS4230PANP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4230PANP Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4230PANP NXP

PBSS4230PANP electronic component of NXP
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Part No.PBSS4230PANP
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: TRANS, NPN/PNP, 30V, 2A, DFN2020-6
Datasheet: PBSS4230PANP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 5
Multiples : 1
5 : USD 0.61
25 : USD 0.61
100 : USD 0.61
250 : USD 0.61
500 : USD 0
1000 : USD 0
N/A

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS4230PANP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4230PANP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 30 V CEO voltage I collector current - - 2 A C I peak collector current single pulse t 1 ms - - 3 A CM p TR1 (NPN) R collector-emitter I = 1 A I = 100 mA pulsed - - 145 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit TR2 (PNP) R collector-emitter I = -1 A I = -100 mA pulsed - - 195 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 Transparent top view sym139 6 C1 collector TR1 DFN2020-6 (SOT1118) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4230PANP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4230PANP 2J 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor for the PNP transistor with negative polarity V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO PBSS4230PANP All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 14 December 2012 2 / 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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