PDTB123YQA NXP

PDTB113Z/123Y/143XQA series 50 V, 500 mA PNP resistor-equipped transistors Rev. 1 6 January 2016 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 R2 Package NXP NPN complement PDTB113ZQA 1 k 10 k DFN1010D-3 PDTD113ZQA (SOT1215) PDTB123YQA 2.2 k 10 k PDTD123YQA PDTB143XQA 4.7 k 10 k PDTD143XQA 1.2 Features and benefits 500 mA output current capability Reduced pick and place costs Built-in bias resistors Low package height of 0.37 mm 10% resistor ratio tolerance Suitable for Automatic Optical Inspection (AOI) of solder joint Simplifies circuit design AEC-Q101 qualified Reduces component count 1.3 Applications Digital applications Controlling IC inputs Cost saving alternative for Switching loads BC807/BC817 series in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 500 mA O DFN1010D-3PDTB113Z/123Y/143XQA NXP Semiconductors 50 V, 500 mA PNP resistor-equipped transistors 2. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 I input (base) O 2 GND GND (emitter) 1 R1 I 3 O output (collector) 4 3 4 O output (collector) R2 GND 2 aaa-019606 Transparent top view 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTB113ZQA DFN1010D-3 plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals PDTB123YQA body: 1.1 1.0 0.37 mm PDTB143XQA PDTB113Z 123Y 143XQA SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet Rev. 1 6 January 2016 2 of 21