PDTB123YT/APGR NXP

PDTB123Y series PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB123YK SOT346 SC-59A TO-236 PDTD123YK 1 PDTB123YS SOT54 SC-43A TO-92 PDTD123YS PDTB123YT SOT23 - TO-236AB PDTD123YT 1 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs 500 mA output current capability 10 % resistor ratio tolerance 1.3 Applications Digital application in automotive and Cost-saving alternative for BC807 series industrial segments in digital applications Controlling IC inputs Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current (DC) - - 500 mA O R1 bias resistor 1 (input) 1.54 2.2 2.86 k R2/R1 bias resistor ratio 4.1 4.55 5NXP Semiconductors PDTB123Y series PNP 500 mA resistor-equipped transistors R1 = 2.2 k, R2 = 10 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab347 3 006aaa148 SOT54A 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab348 3 006aaa148 SOT54 variant 1 input (base) 2 2 output (collector) R1 1 3 GND (emitter) 1 2 R2 3 001aab447 3 006aaa148 SOT23, SOT346 1 input (base) 3 3 2 GND (emitter) R1 3 output (collector) 1 R2 12 2 006aaa144 sym003 PDTB123Y SER 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 16 November 2009 2 of 10