PMMT591A NXP

DISCRETE SEMICONDUCTORS DATA SHEET PMMT591A PNP BISS transistor Product data sheet 2004 Jan 13 Supersedes data of 2001 Jun 11 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low collector-emitter saturation voltage ensures 1 base reduced power consumption. 2 emitter 3 collector APPLICATIONS Battery powered units where high current and low power consumption are important. handbook, halfpage DESCRIPTION 3 3 PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM256 PMMT591A 9B* Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMMT591A plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 40 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 1 A C I peak collector current 2 A CM I peak base current 1 A BM P total power dissipation T 25 C note 1 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 2