PMN120ENEX Nexperia

PMN120ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 3.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 2.4 A T = 25 C - 96 123 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMN120ENE 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 4 D 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain 6 D drain S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN120ENE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN120ENE 3K PMN120ENE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 December 2017 2 / 15