X-On Electronics has gained recognition as a prominent supplier of NTMFS5C682NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS5C682NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS5C682NLT1G ON Semiconductor

NTMFS5C682NLT1G electronic component of ON Semiconductor
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Part No.NTMFS5C682NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Power MOSFET Single N-Channel 60V 25A 21mOhm 3-Pin DPAK T/R
Datasheet: NTMFS5C682NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.662 ea
Line Total: USD 2.66 
Availability - 1453
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1453
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.662
10 : USD 1.892
100 : USD 1.43
500 : USD 1.276
1500 : USD 1.21

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the NTMFS5C682NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS5C682NLT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS5C682NL MOSFET Power, Single, N-Channel 60 V, 21 m , 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses V R MAX I MAX G (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 21 m 10 V 60 V 25 A Compliant 31.5 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5) DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 25 A C D Current R JC G (4) T = 100C 18 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 28 W C D S (1,2,3) R (Note 1) JC T = 100C 14 C NCHANNEL MOSFET Continuous Drain T = 25C I 8.8 A A D Current R JA T = 100C 6.2 (Notes 1, 2, 3) A Steady MARKING State Power Dissipation T = 25C P 3.5 W A D DIAGRAM R (Notes 1 & 2) JA T = 100C 1.7 A D 1 Pulsed Drain Current T = 25C, t = 10 s I 130 A S D A p DM DFN5 5C682L S Operating Junction and Storage Temperature T , T 55 to C J stg (SO8FL) AYWZZ S + 175 CASE 488AA G D Source Current (Body Diode) I 31 A S STYLE 1 D Single Pulse DraintoSource Avalanche E 43 mJ AS 5C682L = Specific Device Code Energy (I = 1.1 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C Y = Year L (1/8 from case for 10 s) W = Work Week ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION See detailed ordering, marking and shipping information in the Parameter Symbol Value Unit package dimensions section on page 5 of this data sheet. JunctiontoCase Steady State R 5.3 C/W JC JunctiontoAmbient Steady State (Note 2) 43 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 0 NTMFS5C682NL/DNTMFS5C682NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 28 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 16 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 18 21 DS(on) GS D m V = 4.5 V I = 10 A 26 31.5 GS D Forward Transconductance g V =15 V, I = 10 A 17 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 410 ISS Output Capacitance C 210 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 7.0 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 10 A 2.5 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 10 A 5.0 nC G(TOT) GS DS D Threshold Gate Charge Q 0.6 G(TH) GatetoSource Charge Q 1.0 nC GS V = 10 V, V = 48 V I = 10 A GS DS D GatetoDrain Charge Q 0.5 GD Plateau Voltage V 2.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 4.0 d(ON) Rise Time t 12 r V = 10 V, V = 48 V, GS DS ns I = 10 A, R = 2.5 D G TurnOff Delay Time t 12 d(OFF) Fall Time t 1.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.8 J Reverse Recovery Time t 18 RR Charge Time t 9.0 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time t 9.0 b Reverse Recovery Charge Q 7.0 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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