S9S08SG8E2WTG NXP

Document Number: MC9S08LG32 Freescale Semiconductor, Inc. Rev. 10, 04/2015 Data Sheet: Technical Data MC9S08LG32 Series with Addendum Covers: MC9S08LG32 and MC9S08LG16 Rev. 10 of the MC9S08LG32 Series data sheet (covering MC9S08LG32 and MC9S08LG16) has two parts: The addendum to revision 9 of the data sheet, immediately following this cover page. Revision 9 of the data sheet, following the addendum. The changes described in the addendum have not been implemented in the specified pages. 2015 Freescale Semiconductor, Inc. All rights reserved.Freescale Semiconductor, Inc. Document Number: MC9S08LG32AD Data Sheet Addendum Rev. 0, 04/2015 Addendum to Rev. 9 of the MC9S08LG32 Series Covers: MC9S08LG32 and MC9S08LG16 This addendum identifies changes to Rev. 9 of the MC9S08LG32 Series data sheet (covering MC9S08LG32 and MC9S08LG16). The changes described in this addendum have not been implemented in the specified pages. 1 Add min values for I (DC injection current) IC Location: Table 8. DC Characteristics, Page 14 In Table 8, DC Characteristics, add min values for I (row number 14) as follows: IC 1 Num C Characteristic Symbol Min Typ Max Unit 14 D DC injection Single pin limit I -0.2 2 mA IC 5, 6, 7 current Total MCU limit, includes sum of -5 25 mA V < V (min) IN SS all stressed pins V > V (max) IN DD 2 Change the max value of t (low power oscillator LPO period) Location: Table 14. Control Timing, Page 29 In Table 14, Control Timing, change the max value of t (row number 2) from 1300 to 1500 s. LPO 2015 Freescale Semiconductor, Inc. All rights reserved.