TDA8932BTN2,118 NXP

TDA8932B Class-D audio amplier Rev. 04 18 December 2008 Product data sheet 1. General description The TDA8932B is a high efciency class-D amplier with low power dissipation. The continuous time output power is 2 15 W in stereo half-bridge application (R =4 ) L or 1 30 W in mono full-bridge application (R =8 ). Due to the low power dissipation L the device can be used without any external heat sink when playing music. Due to the implementation of thermal foldback, even for high supply voltages and/or lower load impedances, the device continues to operate with considerable music output power without the need for an external heat sink. The device has two full-differential inputs driving two independent outputs. It can be used in a mono full-bridge conguration (BTL) or in a stereo half-bridge conguration (SE). 2. Features n Operating voltage from 10 V to 36 V asymmetrical or 5 V to 18 V symmetrical n Mono-bridged tied load (full-bridge) or stereo single-ended (half-bridge) application n Application without heat sink using thermally enhanced small outline package n High efciency and low-power dissipation n Thermally protected and thermal foldback n Current limiting to avoid audio holes n Full short-circuit proof across load and to supply lines (using advanced current protection) n Switchable internal or external oscillator (master-slave setting) n No pop noise n Full-differential inputs 3. Applications n Flat panel television sets n Flat panel monitor sets n Multimedia systems n Wireless speakers n Mini and micro systems n Home sound setsTDA8932B NXP Semiconductors Class-D audio amplier 4. Quick reference data Table 1. Quick reference data V = 22 V f = 320 kHz T =25 C unless otherwise specied. P osc amb Symbol Parameter Conditions Min Typ Max Unit Supplies V supply voltage asymmetrical supply 10 22 36 V P I supply current Sleep mode - 145 195 A P I total quiescent Operating mode no load, no - 4050mA q(tot) current snubbers and no lter connected 1 Stereo SE channel R < 0.1 s P RMS output power continuous time output power o(RMS) per channel THD+N = 10 % f = 1 kHz i R =4 V = 22 V 13.8 15.3 - W L P R =8 V = 30 V 14.0 15.5 - W L P 2 short time output power per channel THD+N = 10 % f = 1 kHz i R =4 V = 29 V 23.8 26.5 - W L P 1 Mono BTL R < 0.1 s P RMS output power continuous time output power o(RMS) THD+N = 10 % f = 1 kHz i R =4 V = 12 V 15.5 17.2 - W L P R =8 V = 22 V 28.9 32.1 - W L P 2 short time output power THD+N = 10 % f = 1 kHz i R =8 V = 29 V 49.5 55.0 - W L P 1 Output power is measured indirectly based on R measurement. DSon 2 Two layer application board (55 mm 45 mm), 35 m copper, FR4 base material in free air with natural convection. 5. Ordering information Table 2. Ordering information Type number Package Name Description Version TDA8932BT SO32 plastic small outline package 32 leads SOT287-1 body width 7.5 mm TDA8932BTW HTSSOP32 plastic thermal enhanced thin shrink small outline SOT549-1 package 32 leads body width 6.1 mm lead pitch 0.65 mm exposed die pad TDA8932B 4 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 18 December 2008 2 of 48